SI4108DY

New Product Si4108DY Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch • Half Bridge • Intermediate Bus Converter SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S N-Channel MOSFET Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Unit V 20.5 16.4 13.8b, c 11.1b, c 60 6.5 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 75 ± 20 A 3b, c 32 51.2 7.8 5 mJ 3.6b, c 2.3b, c - 55 to 150 260 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 68635 S-81195-Rev. A, 26-May-08 www.vishay.com 1 New Product Si4108DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 75 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS /TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage V 71.5 ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V RDS(on) VGS = 10 V, ID = 13.8 A 0.0082 gfs VDS = 15 V, ID = 13.8 A 23 Drain-Source On-State Resistancea Forward Transconductancea mV/°C - 8.9 2 4 V ± 100 nA VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 55 °C 10 30 µA A 0.0098 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 2100 VDS = 38 V, VGS = 0 V, f = 1 MHz tr Rise Time 36 VDS = 38 V, VGS = 10 V, ID = 13.8 A Fall Time Turn-On Delay Time f = 1 MHz VDD = 38 V, RL = 3.5 Ω ID ≅ 11.1 A, VGEN = 8 V, Rg = 1 Ω 1.1 2.2 15 23 18 tf 8 16 td(on) 13 25 11 22 23 40 9 18 VDD = 38 V, RL = 3.5 Ω ID ≅ 11.1 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 0.22 33 td(off) Turn-Off Delay Time nC 10 12 tr Rise Time 54 10.8 22 td(off) Turn-Off Delay Time pF 96 td(on) Turn-on Delay Time 290 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 6.5 60 IS = 11.1 A IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C A 0.80 1.2 V 35 53 ns 49 75 nC 26 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68635 S-81195-Rev. A, 26-May-08 New Product Si4108DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 10 VGS = 10 thru 6 V 8 ID - Drain Current (A) ID - Drain Current (A) 48 36 24 VGS = 5 V 12 6 4 TC = 125 °C 2 TC = 25 °C 0 TC = - 55 °C 0 0 2 4 6 8 10 0 1 2 VDS - Drain-to-Source Voltage (V) 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.00860 3000 2400 Ciss 0.00845 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 0.00830 VGS = 10 V 1800 1200 0.00815 600 Coss Crss 0 0.00800 0 15 30 45 60 0 30 45 60 ID - Drain Current (A) VDS - Drain-to-SourceVoltage(V) On-Resistance vs. Drain Current Capacitance 10 75 2.1 ID = 13.8 A ID = 13.8 A 8 VDS = 38 V 6 VDS = 60 V 4 2 (Normalized) 1.8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 10 V 1.5 1.2 0.9 0 0 10 20 30 40 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68635 S-81195-Rev. A, 26-May-08 150 www.vishay.com 3 New Product Si4108DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.03 0.02 TJ = 125 °C 0.01 0.01 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 4 VSD - Source-to-Drain Voltage (V) 8 12 16 20 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 4 150 120 3 Power (W) VGS(th) (V) ID = 250 µA 2 90 60 1 30 0 - 50 0 - 25 0 25 50 75 100 125 150 0 .0 1 0.1 TJ - Temperature (°C) 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68635 S-81195-Rev. A, 26-May-08 New Product Si4108DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 ID - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 2 0.8 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68635 S-81195-Rev. A, 26-May-08 www.vishay.com 5 New Product Si4108DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 66 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -3 10 -2 10 -1 1 10 100 1000 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68635. www.vishay.com 6 Document Number: 68635 S-81195-Rev. 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