Si4114DY
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
SO-8 Single
D
8
D
7
D
6
D
5
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
Top View
1
S
2
S
3
S
APPLICATIONS
4
G
D
• Low side MOSFET for
synchronous buck
- Game machine
- PC
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a , e
Configuration
G
20
0.006
0.007
27.5
20
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
SO-8
Si4114DY-T1-E3
Si4114DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
LIMIT
VDS
VGS
20
± 16
20 e
18.2
15.2 b, c
12.1 b, c
50
5.1
2.2 b, c
30
45
5.7
3.6
2.5 b, c
1.6 b, c
-55 to +150
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed drain current
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
PD
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
t 10 s
Maximum junction-to-ambient b, d
Maximum junction-to-foot (drain)
Steady state
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 85 °C/W
e. Package limited
S09-0764-Rev. B, 04-May-09
SYMBOL
TYPICAL
MAXIMUM
UNIT
RthJA
RthJF
39
18
50
22
°C/W
Document Number: 68394
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4114DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
19
-
-
-5.3
-
Static
Drain-source breakdown voltage
VDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
1
-
2.1
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
30
-
-
A
VGS = 10 V, ID = 10 A
-
0.0049
0.0060
VGS = 4.5 V, ID = 7 A
-
0.0056
0.0070
VDS = 10 V, ID = 10 A
-
55
-
-
3700
-
-
745
-
-
315
-
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 10 A
-
62
95
-
27.5
42
VDS = 10 V, VGS = 4.5 V, ID = 10 A
-
8
-
-
6
-
f = 1 MHz
0.15
0.7
1.4
-
30
55
td(on)
Rise time
tr
Turn-off delay time
Fall time
Turn-on delay time
Rise time
-
13
25
60
100
tf
-
30
55
td(on)
-
13
25
-
9
18
-
38
65
-
8
16
tr
Turn-off delay time
td(off)
Fall time
VDD = 10 V, RL = 2
ID 5 A, VGEN = 4.5 V, Rg = 1
-
td(off)
VDD = 10 V, RL = 2
ID 5 A, VGEN = 10 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward
current a
Body diode voltage
IS
TC = 25 °C
ISM
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
IS = 2 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
5.1
-
-
50
-
0.71
1.1
V
-
26
50
ns
-
16
30
nC
-
13
-
-
13
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0764-Rev. B, 04-May-09
Document Number: 68394
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4114DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
50
VGS = 10 V thru 3 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
1.8
1.2
TC = 125 °C
0.6
10
TC = 25 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
TC = - 55 °C
0.0
0.0
2.5
0.8
VDS - Drain-to-Source Voltage (V)
1.6
2.4
3.2
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.0070
4500
0.0064
3600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.0058
0.0052
VGS = 10 V
1800
Coss
0.0046
900
0.0040
0
0
10
20
30
40
50
Crss
0
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
20
1.7
ID = 10 A
ID = 10 A
VDS = 5 V
VGS = 4.5 V
1.5
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2700
VDS = 10 V
6
VDS = 15 V
4
1.3
VGS = 10 V
1.1
0.9
2
0
0
13
26
39
52
65
0.7
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S09-0764-Rev. B, 04-May-09
Document Number: 68394
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4114DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
10
0.04
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 10 A
TJ = 25 °C
1
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 °C
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
170
ID = 250 µA
136
Power (W)
ID = 5 mA
- 0.3
102
68
- 0.6
- 0.9
- 50
TJ = 125 °C
0.01
VSD - Source-to-Drain Voltage (V)
0.3
VGS(th) - Variance (V)
0.02
0.00
0.6
0.0
0.03
34
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S09-0764-Rev. B, 04-May-09
Document Number: 68394
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4114DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
ID - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
7.0
1.80
5.6
1.44
4.2
1.08
Power (W)
Power (W)
Current Derating a
2.8
0.72
0.36
1.4
0.00
0.0
0
25
50
75
100
125
150
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
Notes
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-0764-Rev. B, 04-May-09
Document Number: 68394
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4114DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68394.
S09-0764-Rev. B, 04-May-09
Document Number: 68394
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
