Si4124DY
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
SO-8 Single
D
8
D
7
D
6
• TrenchFET® power MOSFET
D
5
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
Top View
1
S
2
S
APPLICATIONS
4
G
3
S
D
• Synchronous rectification
• DC/DC
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) d
Configuration
40
0.0075
0.0090
21
20.5
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
SO-8
Si4124DY-T1-E3
Si4124DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
±20
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
16.4
ID
13.6 a, b
IDM
50
Avalanche current
IAS
33
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
EAS
54
Maximum power dissipation
TA = 25 °C
IS
A
2.1 a, b
5.7
3.6
PD
W
2.5 a, b
1.6 a, b
TA = 70 °C
Operating junction and storage temperature range
mJ
4.7
TC = 25 °C
TC = 70 °C
A
10.9 a, b
Pulsed drain current
L = 0.1 mH
V
20.5
TA = 70 °C
Avalanche energy
UNIT
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient a, c
t 10 s
RthJA
39
50
Maximum junction-to-foot (drain)
Steady state
RthJF
18
22
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 85 °C/W
d. Based on TC = 25 °C
S09-0392-Rev. B, 09-Mar-09
Document Number: 68601
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4124DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
40
-
-
-
V
46
-
-
-6.7
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
Gate-source threshold voltage
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
1
-
3
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ±20 V
-
-
±100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
5
VDS 5 V, VGS = 10 V
50
-
-
A
VGS = 10 V, ID = 14 A
-
0.0062
0.0075
VGS = 4.5 V, ID = 12 A
-
0.0073
0.0090
VDS = 15 V, ID = 16 A
-
55
-
-
3540
-
-
335
-
-
142
-
-
51
77
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 16 A
-
21
32
VDS = 10 V, VGS = 4.5 V, ID = 16 A
-
10.7
-
-
3.0
-
f = 1 MHz
-
0.75
1.5
-
30
45
td(on)
tr
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
-
14
21
-
38
60
tf
-
11
17
td(on)
-
14
21
td(off)
tr
td(off)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
tf
-
10
15
-
32
50
-
8
15
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
-
-
32
-
-
50
IS = 10 A, VGS = 0 V
-
0.8
1.2
-
25
50
ns
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
19
38
nC
-
13
-
-
12
-
A
V
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0392-Rev. B, 09-Mar-09
Document Number: 68601
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4124DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 3 V
20
10
6
4
TC = 125 °C
2
TC = 25 °C
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
0
1
2
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
4
4000
VGS = 4.5 V
0.008
0.006
3200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 10 V
0.004
0.002
2400
1600
Coss
800
Crss
0.000
0
0
10
20
30
40
50
0
20
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
40
2.0
10
ID = 16 A
VDS = 10 V
ID = 14 A
VGS = 10 V
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID - Drain Current (A)
VDS = 20 V
6
VDS = 30 V
4
1.6
VGS = 4.5 V
1.2
0.8
2
0
0
11
22
33
Qg - Total Gate Charge (nC)
Gate Charge
S09-0392-Rev. B, 09-Mar-09
44
55
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68601
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4124DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.03
100
ID = 14 A
TJ = 150 °C
1
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
0.1
0.02
TJ = 125 °C
0.01
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
4
5
6
7
8
9
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
170
ID = 250 µA
136
ID = 5 mA
Power (W)
VGS(th) - Variance (V)
3
VGS - Gate-to-Source Voltage (V)
0.3
- 0.3
- 0.6
- 0.9
- 50
2
VSD - Source-to-Drain Voltage (V)
0.6
0.0
1
102
68
34
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
100 s, DC
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S09-0392-Rev. B, 09-Mar-09
Document Number: 68601
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4124DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
ID - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
7.0
1.80
5.6
1.44
4.2
1.08
Power (W)
Power (W)
Current Derating a
2.8
0.72
0.36
1.4
0.00
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-0392-Rev. B, 09-Mar-09
Document Number: 68601
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4124DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-1
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68601.
S09-0392-Rev. B, 09-Mar-09
Document Number: 68601
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
