SI4153DY-T1-GE3

Si4153DY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • TrenchFET® Gen III p-channel power MOSFET • 100% Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S APPLICATIONS 4 G S • Adaptor switch • Power management • Load switch G PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -10 V RDS(on) max. (Ω) at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration -30 0.0095 0.0150 31 -19.3 Single P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SO-8 Si4153DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA =25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT -30 ± 25 -19.3 -15.4 -14.3 b, c -11.4 b, c -100 -5.1 -3.3 b, c -15 11.25 5.6 3.6 3.1 b, c 2.0 b, c -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 70 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d Maximum junction-to-case (drain) t ≤ 10 s Steady state SYMBOL RthJA RthJF TYPICAL 34 18 MAXIMUM 40 22 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 85 °C/W e. TC = 25 °C S21-1169-Rev. A, 29-Nov-2021 Document Number: 63167 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4153DY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - - V -21 - - 3.8 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 25 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15 VGS = -10 V, ID = -10 A - 0.0072 0.0095 VGS = -4.5 V, ID = -10 A - 0.0120 0.0150 VDS = -10 V, ID = -10 A - 44 - - 3600 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 430 - - 390 - VDS = -15 V, VGS = -10 V, ID = -10 A - 62 93 VDS = -15 V, VGS = -4.5 V, ID = -10 A - 31 47 - 9.2 - μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -4.5 V, ID = -10 A - 10.8 - 0.5 1.9 3.5 - 50 100 - 46 90 - 35 70 tf - 15 30 td(on) - 13 25 - 10 20 - 36 70 - 10 20 f = 1 MHz td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -5 A, VGS = 0 V IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C - - -5.1 - - -100 A - -0.75 -1.1 V - 30 60 ns - 11 22 nC - 8 - - 22 - ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1169-Rev. A, 29-Nov-2021 Document Number: 63167 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4153DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 10000 100 VGS = 10 V thru 5 V 40 100 VGS = 3 V 20 1000 60 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 80 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 100 TC = 25 °C 20 TC = 125 °C TC = -55 °C VGS = 0 V to 2 V 10 0 0 0.5 1.0 1.5 2.0 10 0 0 2.5 1 2 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 10 000 10000 Ciss 1000 0.012 VGS = 10 V 0.008 100 1000 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.016 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 4 VDS - Drain-to-Source Voltage (V) 0.020 1000 Coss 0.004 100 Crss 0 16 32 48 64 10 100 10 0 0 80 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title Axis Title 10000 1000 1st line 2nd line VDS = 10 V, 15 V, 20 V 4 100 2 10 0 0 14 28 42 56 70 1.4 VGS = 10 V, 10 A 1000 1.2 1st line 2nd line ID = 10 A 8 6 10000 1.6 2nd line RDS(on) - On-Resistance (Normalized) 10 2nd line VGS - Gate-to-Source Voltage (V) 3 1.0 100 VGS = 4.5 V, 10 A 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-1169-Rev. A, 29-Nov-2021 Document Number: 63167 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4153DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.05 10000 100 1000 TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.04 0.02 TJ = 125 °C 100 0.01 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.8 10000 500 ID = 250 µA 400 1st line 2nd line 2nd line P - Power (W) 1000 0.4 0.2 100 ID = 5 mA 0 1000 300 1st line 2nd line 0.6 2nd line VGS(th) - Variance (V) 4 200 100 100 10 -0.2 -50 -25 0 25 50 75 100 125 0 0.0001 150 10 0.001 0.01 0.1 1 10 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 100 µs ID limited 10 1 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms Limited by RDS(on) a 100 ms100 1s 0.1 10 s TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S21-1169-Rev. A, 29-Nov-2021 Document Number: 63167 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4153DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 25 1000 15 1st line 2nd line 2nd line ID - Drain Current (A) 20 10 100 5 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 2.0 5.6 1st line 2nd line 0.8 100 1000 4.2 1st line 2nd line 1000 1.2 2nd line P - Power (W) 1.6 2nd line P - Power (W) 10000 7.0 2.8 100 1.4 0.4 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Ambient Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-1169-Rev. A, 29-Nov-2021 Document Number: 63167 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4153DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 1000 PDM 0.1 0.1 t1 t2 0.05 t1 t2 2. Per unit base = RthJA = 85 °C/W 1. Duty cycle, D = 0.02 3. TJM - TA = PDMZthJA 0.001 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63167. S21-1169-Rev. A, 29-Nov-2021 Document Number: 63167 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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