Si4162DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0079 at VGS = 10 V
19.3a
0.010 at VGS = 4.5 V
a
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ.)
8.8 nC
17.1
RoHS
COMPLIANT
APPLICATIONS
• DC/DC
- High Side
- VRM
- POL
- Server
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
19.3a
15.4
13.6b, c
10.9b, c
70
31
48
4.2a
2.1b, c
5
3.2
2.5b, c
1.6b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
38
20
Maximum
50
25
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
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1
Si4162DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
32
mV/°C
- 5.5
1
3
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
50
µA
A
VGS = 10 V, ID = 20 A
0.0065
0.0079
VGS = 4.5 V, ID = 14 A
0.0082
0.010
VDS = 15 V, ID = 20 A
70
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
1155
VDS = 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
95
VDS = 15 V, VGS = 10 V, ID = 20 A
VDS = 15 V, VGS = 4.5 V, ID = 20 A
20
30
8.8
14
3.5
f = 1 MHz
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 17 Ω
1.0
2.0
20
30
15
25
25
40
tf
10
15
td(on)
14
20
tr
td(off)
nC
2.2
td(on)
tr
260
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω
tf
9
15
25
40
9
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
30
70
IS = 4.0 A, VGS = 0 V
IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
21
42
ns
15
30
nC
12.6
8.4
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68967
S-82621-Rev. A, 03-Nov-08
Si4162DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
70
TC = - 55 °C
VGS = 10 thru 4 V
60
I D - Drain Current (A)
I D - Drain Current (A)
0.8
50
40
30
20
VGS = 3 V
TC = 25 °C
0.6
0.4
0.2
10
TC = 125 °C
0.5
1.0
1.5
0.0
0.0
2.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.012
1500
0.010
1200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
VGS = 4.5 V
0.008
VGS = 10 V
0.006
3.0
Ciss
900
600
Coss
0.004
300
0.002
0
Crss
0
10
20
30
40
50
60
0
70
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.7
ID = 20 A
ID = 20 A
VDS = 15 V
8
1.5
VDS = 7.5 V
6
VDS = 22.5 V
4
2
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.3
VGS = 4.5 V
1.1
0.9
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
20
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4162DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
0.025
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
TJ = 150 °C
1
0.1
TJ = - 50 °C
0.01
0.001
0.0
0.020
0.015
TJ = 125 °C
0.010
0.005
TJ = 25 °C
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
100
0.2
80
Power (W)
VGS(th) Variance (V)
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.5
- 0.1
ID = 5 mA
60
40
ID = 250 µA
- 0.7
- 1.0
- 50
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
- 0.4
3
20
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
1
10
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10 µs
100 µs
10
I D - Drain Current (A)
0.1
Time (s)
1 ms
10 ms
1
100 ms
1s
10 s
100 s, DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68967
S-82621-Rev. A, 03-Nov-08
Si4162DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
I D - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
6.0
2.0
1.6
Power (W)
Power (W)
4.5
3.0
1.2
0.8
1.5
0.4
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
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5
Si4162DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68967.
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6
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Revision: 01-Jan-2022
1
Document Number: 91000
