SI4164DY-T1-GE3

Si4164DY www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 • TrenchFET® power MOSFET D 5 • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S 4 G APPLICATIONS D • DC/DC conversion - Low side switch • Notebook PC PRODUCT SUMMARY • Gaming VDS (V) 30 RDS(on) max. () at VGS = 10 V 0.0032 RDS(on) max. () at VGS = 4.5 V 0.0039 Qg typ. (nC) 26.5 ID (A) a Configuration G S 30 N-Channel MOSFET Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4164DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C 30 TC = 70 °C 22.6 ID TA = 25 °C 17.1 b, c Pulsed drain current IDM TC = 25 °C L = 0.1 mH Avalanche energy 5.4 2.7 b, c IAS 40 EAS 80 TC = 25 °C 3.3 PD TA = 25 °C W 3 b, c 1.9 b, c TA = 70 °C Operating junction and storage temperature range mJ 6 TC = 70 °C Maximum power dissipation A 70 IS TA = 25 °C Single pulse avalanche current V 21.5 b, c TA = 70 °C Continuous source-drain diode current UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t  10 s RthJA 33 42 Maximum junction-to-foot (drain) Steady state RthJF 16 21 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 85 °C/W S-82015-Rev. A, 01-Sep-2008 Document Number: 68870 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4164DY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 1 mA 30 - - V - 27 - - -5.6 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - A  VGS = 10 V, ID = 15 A - 0.0026 0.0032 VGS = 4.5 V, ID = 10 A - 0.0032 0.0039 VDS = 15 V, ID = 15 A - 75 - - 3545 - - 650 - - 240 - - 62 95 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A - 26.5 40 VDS = 15 V, VGS = 4.5 V, ID = 10 A - 8.5 - - 7.3 - f = 1 MHz 0.2 1.1 2.2 - 35 60 td(on) tr VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  - 16 30 - 48 85 tf - 16 30 td(on) - 18 35 td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf - 8 16 - 41 75 - 8 18 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 3 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 5.4 - - 70 - 0.72 1.1 - 33 65 ns - 27 54 nC - 17 - - 16 - A V ns Notes a. Pulse test; pulse width 300 μs, duty cycle2 % b. Guaranteed by design, not subject to production testing      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-82015-Rev. A, 01-Sep-2008 Document Number: 68870 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4164DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 10 VGS = 10 thru 4 V 8 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 56 42 28 14 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 4500 0.0040 3600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.0045 VGS = 4.5 V 0.0030 VGS = 10 V 0.0020 0 42 56 Ciss Coss Crss 0 70 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 10 ID = 15 A ID = 10 A 1.6 VDS = 15 V VDS = 10 V 6 VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1800 900 28 4 2700 0.0025 14 3 Transfer Characteristics Output Characteristics 0.0035 2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0 TC = - 55 °C 0 1.2 VGS = 4.5 V 1.0 0.8 0 0 13 26 39 52 65 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S-82015-Rev. A, 01-Sep-2008 Document Number: 68870 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4164DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.025 ID = 15 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.020 0.015 0.010 TJ = 125 °C 0.005 0 VSD - Source-to-Drain Voltage (V) 1 2 3 4 5 6 7 8 9 10 VGS Gate to Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 0.0 Power (W) VGS(th) Variance (V) TJ = 25 °C 0.000 1.2 - 0.2 ID = 5 mA 120 80 - 0.4 ID = 250 µA 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) Limited by R DS(on)* 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S-82015-Rev. A, 01-Sep-2008 Document Number: 68870 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4164DY www.vishay.com Vishay Siliconix 35 7.5 28 6.0 21 4.5 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 14 7 3.0 1.5 0 0.0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Power Derating, Junction-to-Foot 2.0 Power (W) 1.6 1.2 0.8 0.4 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient Note c. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-82015-Rev. A, 01-Sep-2008 Document Number: 68870 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4164DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68870. S-82015-Rev. A, 01-Sep-2008 Document Number: 68870 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000