SI4170DY-T1-GE3

New Product Si4170DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0045 at VGS = 4.5 V 27 Qg (Typ.) 29 nC • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested RoHS COMPLIANT APPLICATIONS • Notebook PC Core - Low Side Switch SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4170DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 ± 20 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range V 30 22.8 21.8b, c 17.3b, c 70 ID IDM Pulsed Drain Current Unit A 5.4 2.7b, c 40 80 6 3.3 mJ W 3.0b, c 1.9b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68396 S-81054-Rev. A, 12-May-08 Symbol RthJA RthJF Typical Maximum Unit 33 16 42 21 °C/W www.vishay.com 1 New Product Si4170DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 6.4 1.4 2.6 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) V 33 30 µA A VGS = 10 V, ID = 15 A 0.0029 0.0035 VGS = 4.5 V, ID = 10 A 0.0036 0.0045 VDS = 15 V, ID = 15 A 90 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 4355 VDS = 15 V, VGS = 0 V, f = 1 MHz 256 VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 0.2 0.55 1.1 15 30 10 20 65 8 16 td(on) 36 65 17 30 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 45 11.5 tf td(off) Turn-Off Delay Time 100 29 35 tr Rise Time 65 nC 7.5 f = 1 MHz td(on) Turn-On Delay Time pF 595 45 80 20 40 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS 40 ISM 70 IS = 3 A VSD 0.74 1.1 A V Body Diode Reverse Recovery Time trr 34 65 ns Body Diode Reverse Recovery Charge Qrr 29 55 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 17 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68396 S-81054-Rev. A, 12-May-08 New Product Si4170DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 VGS = 3 V 3 TC = 125 °C 2 TC = 25 °C 14 1 0 0 TC = - 55 °C 0 1 2 3 4 5 0 1 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 5500 VGS = 4.5 V Ciss 0.0036 4400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 VDS - Drain-to-Source Voltage (V) 0.0040 0.0032 0.0028 VGS = 10 V 3300 2200 0.0024 1100 0.0020 0 0 14 28 42 56 70 Coss Crss 0 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.7 10 ID = 20 A VDS = 10 V ID = 15 A 1.5 8 VDS = 15 V VDS = 20 V 6 4 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 14 28 42 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68396 S-81054-Rev. A, 12-May-08 56 70 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4170DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.015 100 ID = 15 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.012 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 200 0.3 160 Power (W) V GS(th) Variance (V) 0.001 0.0 0.0 ID = 5 mA - 0.3 - 0.6 10 120 80 40 ID = 250 µA - 0.9 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 100 ms 1 1s 10 s 0.1 DC BVDSS TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68396 S-81054-Rev. A, 12-May-08 New Product Si4170DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 I D - Drain Current (A) 28 21 14 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 7.5 1.80 6.0 1.44 Power (W) Power (W) Current Derating* 4.5 3.0 1.08 0.72 0.36 1.5 0.00 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68396 S-81054-Rev. A, 12-May-08 www.vishay.com 5 New Product Si4170DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68396. www.vishay.com 6 Document Number: 68396 S-81054-Rev. A, 12-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000