Si4178DY
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Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
SO-8 Single
D
8
D
7
D
6
D
5
• TrenchFET® power MOSFET
• 100% Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
1
S
2
S
3
S
4
G
APPLICATIONS
D
• Notebook system power
• Low current DC/DC
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
0.021
RDS(on) max. () at VGS = 4.5 V
0.033
Qg typ. (nC)
3.7
ID (A) a
12
Configuration
G
30
S
N-Channel MOSFET
Single
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
Si4178DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
30
Gate-source voltage
VGS
± 25
TC = 70 °C
9.7 a
ID
TA = 25 °C
8.3 b, c
6.7 b, c
TA = 70 °C
Pulsed drain current
IDM
TC = 25 °C
Continuous source-drain diode current
L = 0.1 mH
Single pulse avalanche energy
4.2
2 b, c
IAS
10
EAS
5
TC = 25 °C
3.2
PD
TA = 25 °C
W
2.4 b, c
1.5 b, c
TA = 70 °C
Operating junction and storage temperature range
mJ
5
TC = 70 °C
Maximum power dissipation
A
40
IS
TA = 25 °C
Single pulse avalanche current
V
12 a
TC = 25 °C
Continuous drain current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient b, d
t 10 s
RthJA
42
53
Maximum junction-to-foot (drain)
Steady state
RthJF
19
25
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 85 °C/W
S10-0212-Rev. A, 25-Jan-10
Document Number: 65718
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4178DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
-
V
25
-
-
-6
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.4
-
2.8
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 25 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
20
-
-
A
VGS = 10 V, ID = 8.4 A
-
0.017
0.021
VGS = 4.5 V, ID = 2 A
-
0.027
0.033
VDS = 15 V, ID = 8.4 A
-
22
-
-
405
-
-
110
-
-
56
-
-
7.5
12
-
3.7
5.6
VDS = 15 V, VGS = 4.5 V, ID = 8.4 A
-
1.6
-
-
1.3
-
f = 1 MHz
0.5
2.6
5.2
-
20
30
-
15
25
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 8.4 A
td(on)
tr
td(off)
VDD = 15 V, RL = 2.2
ID 6.7 A, VGEN = 4.5 V, Rg = 1
-
11
20
tf
-
10
15
td(on)
-
7
15
tr
td(off)
VDD = 15 V, RL = 2.2
ID 6.7 A, VGEN = 10 V, Rg = 1
tf
-
10
15
-
12
20
-
10
15
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 6.7 A, VGS = 0 V
IF = 6.7 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
4.2
-
-
40
-
0.85
1.2
V
-
15
30
ns
-
8
16
nC
-
8.5
-
-
6.5
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2%
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S10-0212-Rev. A, 25-Jan-10
Document Number: 65718
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4178DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
8
I D - Drain Current (A)
I D - Drain Current (A)
V GS = 10 V thru 6 V
30
V GS = 5 V
20
6
T C = 25 °C
4
10
V GS = 4 V
2
T C = 125 °C
V GS = 3 V
0
0.0
T C = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
V DS - Drain-to-Source Voltage (V)
0
3.0
1
2
3
4
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.14
600
0.12
500
Ciss
0.10
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
5
0.08
V GS = 4.5 V
0.06
0.04
400
300
200
Coss
V GS = 10 V
0.02
100
Crss
0
0.00
0
5
10
15
20
25
30
ID - Drain Current (A)
35
0
40
5
30
Capacitance
On-Resistance vs. Drain Current
10
1.6
R DS(on) - On-Resistance (Normalized)
ID = 8.4 A
VGS - Gate-to-Source Voltage (V)
10
15
20
25
V DS - Drain-to-Source Voltage (V)
V DS = 15 V
8
V DS = 7.5 V
6
V DS = 24 V
4
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
S10-0212-Rev. A, 25-Jan-10
8
V GS = 10 V; I D = 8.4 A
1.4
1.2
1.0
V GS = 4.5 V; I D = 8.4 A
0.8
0.6
- 50
- 25
0
25
50
75
100
T J - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 65718
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4178DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.050
100
T J = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.045
T J = 25 °C
10
0.040
ID = 2 A; T J = 125 °C
0.035
ID = 8.4 A; T J = 125 °C
0.030
ID = 8.4 A; T J = 25 °C
0.025
0.020
ID = 2 A; T J = 25 °C
0.015
1
0.0
0.010
0.2
0.4
0.6
0.8
1.0
1.2
V SD - Source-to-Drain Voltage (V)
0
1.4
2
4
6
8
10
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
30
2.8
25
20
ID = 250 μA
Power (W)
VGS(th) (V)
2.6
2.4
2.2
15
10
2.0
5
1.8
1.6
- 50
- 25
0
25
50
75
100
T J - Temperature (°C)
125
0
0.001
150
0.01
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power
100
Limited by R DS(on)*
I D - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
TA = 25 °C
Single Pulse
1s
10 s
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S10-0212-Rev. A, 25-Jan-10
Document Number: 65718
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4178DY
www.vishay.com
Vishay Siliconix
15
5
12
4
Package Limited
9
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
3
3
2
1
0
0
0
25
50
75
100
125
T C - Case Temperature (°C)
Current Derating a
150
25
50
75
100
125
T C - Case Temperature (°C)
150
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S10-0212-Rev. A, 25-Jan-10
Document Number: 65718
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4178DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon
technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65718.
S10-0212-Rev. A, 25-Jan-10
Document Number: 65718
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Revision: 01-Jan-2022
1
Document Number: 91000
