SI4196DY-T1-E3

New Product Si4196DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter • Load Switches SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4196DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit 20 ±8 IDM TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD A 1.6b, c 5 1.25 4.6 2.9 mJ W 2.0b, c 1.28b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V 8e 8e 6.4b, c 5.1b, c 20 3.8 ID Continuous Source-Drain Diode Current Unit °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 52 62.5 Steady State RthJF 22 27 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. e. Package limited. Document Number: 65534 S09-2112-Rev. A, 12-Oct-09 www.vishay.com 1 New Product Si4196DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 21 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V - 3.0 0.4 10 VGS = 4.5 V, ID = 8 A Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs µA A 0.021 0.027 VGS = 2.5 V, ID = 5 A 0.025 0.032 VGS = 1.8 V, ID = 2.5 A 0.031 0.040 VDS = 10 V, ID = 8 A 28 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 830 VDS = 10 V, VGS = 0 V, f = 1 MHz 63 VDS = 10 V, VGS = 8 V, ID = 8 A VDS = 10 V, VGS = 4.5 V, ID = 8 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 12.5 1.1 f = 1 MHz VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 0.6 3.0 6.0 8 16 13 25 33 60 9 18 td(on) 5 10 td(off) VDD = 10 V, RL = 2 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω tf Fall Time 22 8.3 tf tr Rise Time Turn-Off Delay Time 14.5 nC 1.1 td(on) Turn-On Delay Time pF 115 12 24 22 40 8 16 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 3.8 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 IS = 5.4 A IF = 5.4 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.78 1.2 V 11 22 ns 4 8 nC 6 5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65534 S09-2112-Rev. A, 12-Oct-09 New Product Si4196DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 VGS = 5 V thru 2 V 4 I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 1.5 V 8 3 2 TC = 25 °C 1 4 TC = 125 °C 0.5 1.0 1.5 2.0 0 0.0 2.5 0.5 TC = - 55 °C 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.080 1200 0.066 960 VGS = 1.8 V 0.052 0.038 VGS = 2.5 V 2.5 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 720 480 0.024 Coss 240 VGS = 4.5 V 0.010 Crss 0 0 4 8 12 16 20 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 8.0 ID = 8 A ID = 8 A VGS = 2.5 V 1.5 VDS = 10 V 4.8 VDS = 15 V VDS = 5 V 3.2 (Normalized) 6.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.3 VGS = 4.5 V 1.1 0.9 1.6 0.0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65534 S09-2112-Rev. A, 12-Oct-09 12 15 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4196DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.125 ID = 8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.100 0.075 0.050 TJ = 150 °C 0.025 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 50 40 Power (W) VGS(th) Variance (V) 0.1 - 0.1 ID = 5 mA 30 20 - 0.3 10 ID = 250 µA - 0.5 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 0.01 0.001 0.1 1 s, 10 s DC TA = 25 Single Pulse 1 BVDSS Limited 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65534 S09-2112-Rev. A, 12-Oct-09 New Product Si4196DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 11.0 I D - Drain Current (A) 8.8 Package Limited 6.6 4.4 2.2 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 6.0 1.5 4.8 1.2 3.6 0.9 Power (W) Power (W) Current Derating* 2.4 0.6 0.3 1.2 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65534 S09-2112-Rev. A, 12-Oct-09 www.vishay.com 5 New Product Si4196DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65534. www.vishay.com 6 Document Number: 65534 S09-2112-Rev. A, 12-Oct-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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