SI4214DDY-T1-E3

Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.1 APPLICATIONS • Notebook System Power • Low Current DC/DC D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G1 G2 Top View Ordering Information: Si4214DDY-T1-E3 (Lead (Pb)-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 30 ± 20 8.5 7.5 ID Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range A 1.8b, c 30 10 5 3.1 2.0 ISM IAS EAS L = 0.1 mH V 7.5b, c 5.9b, c 30 2.8 IDM TC = 25 °C TA = 25 °C Unit PD W 2.0b, c 1.25b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady-State Symbol RthJA RthJF Typ. Max. Unit 52 30 62.5 40 °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4214DDY-T1-E3 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 30 Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA VDS/TJ ID = 250 µA 3.0 VGS(th)/TJ ID = 250 µA - 5.2 Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th) VDS = VGS, ID= 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs V 1.2 mV/°C 2.5 V 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS = 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 8 A 0.016 0.0195 VGS = 4.5 V, ID = 5 A 0.019 0.023 VDS = 15 V, ID = 8 A 27 VDS = 15 V, VGS = 0 V, ID = 1 MHz 140 VDS = 15 V, VGS = 10 V, ID = 8 A 14.5 22 7.1 11  S a Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 660 86 VDS = 15 V, VGS = 4.5 V, ID = 8 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 5.2 14 28 45 80 35 12 24 td(on) 7 14 10 20 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  tf Fall Time 2.6 tf td(off) Turn-Off Delay Time VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  0.5 18 tr Rise Time 1.9 nC 2.7 f = 1 MHz td(on) Turn-On Delay Time pF 15 30 7 14  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta IS TC = 25 °C 2.8 ISM VSD 30 IS = 2 A A 0.77 1.1 Body Diode Reverse Recovery Time trr 17 34 ns Body Diode Reverse Recovery Charge Qrr 9 18 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Body Diode Voltage IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 10 7 V nS Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4214DDY-T1-E3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 40 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 32 24 VGS = 3 V 16 6 4 TC = 25 °C 2 8 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 0 2.5 1 4 5 Transfer Characteristics Output Characteristics 0.030 1000 0.026 800 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.022 VGS = 4.5 V 0.018 600 400 VGS = 10 V 0.014 2 Coss 200 Crss 0 0.010 0 10 20 30 40 0 50 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 10 ID = 8 A ID = 8 A 1.6 8 VDS = 10 V 6 VDS = 20 V VDS = 15 V 4 2 0 0.0 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.2 VGS = 4.5 V 1.0 0.8 3.2 6.4 9.6 12.8 16 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4214DDY-T1-E3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 100 ID = 8 A I S - Source Current (A) R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.01 0.08 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.5 50 0.2 40 - 0.1 Power (W) VGS(th) Variance (V) 1 ID = 5 mA - 0.4 30 20 ID = 250 µA - 0.7 - 1.0 - 50 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4214DDY-T1-E3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 I D - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4214DDY-T1-E3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. www.vishay.com 6 Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000