Si4322DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
30
ID (A)a
RDS(on) (Ω)
0.0085 at VGS = 10 V
18
0.0125 at VGS = 4.5 V
15
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Qg (Typ.)
11.7 nC
APPLICATIONS
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IS (A)
30
0.4 at 2 A
5a
• Synchronous Buck-Low Side
- Notebook
- Server
- Workstation
• Synchronous Rectifier-POL
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
Schottky Diode
G
Top View
N-Channel MOSFET
Ordering Information: Si4322DY-T1-E3 (Lead (Pb)-free)
Si4322DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
V
A
5
IS
2.8b, c
5.4
3.4
PD
W
3.1b, c
2.0b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
14b, c
11b, c
50
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
18
15
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typ.
34
Max.
40
17
23
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
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1
Si4322DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID= 250 µA
1.5
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On -State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
3.0
V
± 100
nA
VDS = 30 V, VGS = 0 V
0.18
1
VDS = 30 V, VGS = 0 V, TJ = 100 °C
22
100
VGS = 10 V, ID = 15 A
0.007
0.0085
VGS = 4.5 V, ID = 12 A
0.0095
0.012
VDS = 15 V, ID = 15 A
56
VDS ≥ 5 V, VGS = 10 V
RDS(on)
gfs
30
mA
A
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1640
VDS = 15 V, VGS = 0 V, f = 1 MHz
380
VDS = 15 V, VGS = 10 V, ID = 15 A
25.5
38
11.7
17.5
pF
118
VDS = 15 V, VGS = 4.5 V, ID = 15 A
5.1
f = 1 MHz
2.3
nC
3.6
td(on)
3.5
24
36
84
126
36
54
tf
17
26
td(on)
12
18
36
54
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 4.5 V, RG = 1 Ω
tr
td(off)
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, RG = 1 Ω
tr
td(off)
tf
36
54
7
11
Ω
ns
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TC = 25 °C
5
50
IS = 2 A
0.35
0.4
26
40
ns
16
25
nC
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
12.5
Reverse Recovery Rise Time
tb
13.5
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
A
V
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
Si4322DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
50
VGS = 10 V thru 4 V
1.6
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
10
1.2
25 °C
0.8
0.4
TJ = 125 °C
- 55 °C
3V
0.0
0.5
1.0
1.5
2.0
2.5
0
4
Transfer Characteristics
0.010
1760
VGS = 4.5 V
0.009
0.008
VGS = 10 V
0.006
0
20
30
40
Ciss
880
440
10
5
1320
0.007
50
Coss
Crss
0
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.7
10
ID = 10 A
ID = 15 A
8
1.5
VDS = 10 V
RDS(on) - On-Resi stance
(Normalized)
VG S - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
2200
VDS = 15 V
6
VDS = 20 V
4
VGS = 10 V
1.3
VGS = 4.5 V
1.1
0.9
2
0
0.0
2
Output Characteristics
0.011
0
1
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
RDS(on) - On-Resistance (mΩ)
0
0.0
5.2
10.4
15.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
20.8
26.0
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4322DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.050
RDS(on) - Drain-to-Source On-Resistance (Ω)
IS - Source Current (A)
100
T J = 150 °C
10
1
T J = 25 °C
0.1
0.030
0.020
TJ = 125 °C
0.010
TJ = 25 °C
0.000
0
0.4
0.2
0.6
0.8
1.0
0
1.2
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1
200
0.1
160
10
0.01
30 V
Power (W)
IR - Reverse (A)
0.040
10 V
10 -1
120
80
10-2
40
10 -3
10 -4
0
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Reverse Current (Schottky)
100
Junction-to-Ambient
Limited by RDS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
0.01
0.1
TA = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
Si4322DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
22
ID - Drain Reverse (A)
18
13
9
4
0
0
25
50
75
100
150
125
TC - Case Temperature (°C)
7.0
2.0
5.6
1.6
4.2
1.2
Power (W)
Power (W)
Current Derating*
2.8
1.4
0.8
0.4
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
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Si4322DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C
Single Pulse
3. TJM – T = PDMZthJA(t)
4. Surface Mounted
0.01
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73860.
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Document Number: 73860
S09-0226-Rev. B, 09-Feb-09
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Revision: 01-Jan-2022
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Document Number: 91000