SI4340CDY-T1-E3

Si4340CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20 18.9 Qg (Typ.) 9.6 14.1 SCHOTTKY PRODUCT SUMMARY VDS (V) 20 VSD (V) Diode Forward Voltage 0.55 V at 2.5 A APPLICATIONS IF (A) 2 SO-14 D1 14 S1 2 13 S1 3 12 D2 G2 4 11 D2 S2 5 10 D2 S2 6 9 D2 S2 7 8 D2 D1 G1 1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC • DC/DC Converters - Game Stations - Notebook PC Logic D2 D1 Schottky Diode G2 G1 S2 S1 Top View Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free) Si4340CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel 2 MOSFET N-Channel 1 MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Channel-1 Channel-2 Drain-Source Voltage 20 20 Gate-Source Voltage VGS ± 20 ± 16 Continuous Drain Current (TJ = 150 °C) 14.1 20 TC = 70 °C 11.2 16.5 11.5b, c 15.2b, c ID b, c TA = 70 °C IDM Pulsed Drain Current Source-Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS TC = 70 °C TA = 25 °C 2.5 4.5 1.7b, c 2.5b, c IAS 5 EAS 1.25 5.4 1.9 3.5 2b, c 3b, c 1.3b, c 1.9b, c TJ, Tstg A mJ 3 PD TA = 70 °C Operating Junction and Storage Temperature Range 12.2b, c 50 9.2 40 TC = 25 °C Maximum Power Dissipation V TC = 25 °C TA = 25 °C Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ. Max. 53 62.5 t ≤ 10 s RthJA Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State RthJF 35 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W. Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 42 Channel-2 Typ. Max. 35 42 18 23 Unit °C/W www.vishay.com 1 Si4340CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 20 VGS = 0 V, ID = 250 µA Ch-2 20 V ID = 250 µA Ch-1 20 ID = 25 mA Ch-2 22 ID = 250 µA Ch-1 - 5.5 mV/°C ID = 25 mA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 3 VDS = VGS, ID = 250 µA Ch-2 0.8 2.2 VDS = 0 V, VGS = ± 20 V Ch-1 100 VDS = 0 V, VGS = ± 16 V Ch-2 100 VDS = 20 V, VGS = 0 V Ch-1 1 VDS = 20 V, VGS = 0 V Ch-2 100 VDS = 20 V, VGS = 0 V, TJ = 85 °C Ch-1 15 - 2.5 VDS = 20 V, VGS = 0 V, TJ = 85 °C Ch-2 VDS ≥ 5 V, VGS = 10 V Ch-1 20 VDS ≥ 5 V, VGS = 10 V Ch-2 30 VGS = 10 V, ID = 11.5 A Ch-1 0.0077 0.0094 VGS = 10 V, ID = 15.2 A Ch-2 0.0065 0.008 VGS = 4.5 V, ID = 10 A Ch-1 0.010 0.0125 0.0075 0.0095 V nA µA 10 000 A VGS = 4.5 V, ID = 14 A Ch-2 VDS = 10 V, ID = 11.5 A Ch-1 45 VDS = 10 V, ID = 15.2 A Ch-2 73 Ch-1 1300 Ch-2 1900 Ch-1 330 Ch-2 500 Ch-1 150 Ch-2 160 VDS = 10 V, VGS = 10 V, ID = 11.5 A Ch-1 21 VDS = 10 V, VGS = 10 V, ID = 15.2 A Ch-2 31 47 Ch-1 9.6 15 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 11.5 A Ch-2 14.1 22 Ch-1 4 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 15.2 A Ch-2 5 Ch-1 3 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Qgs Qgd Rg f = 1 MHz pF 32 Ch-2 3.5 Ch-1 0.65 1.2 Ch-2 1.4 2.8 nC Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 Si4340CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 20 30 Ch-2 22 35 Ch-1 10 15 Ch-2 10 15 Ch-1 20 30 Ch-2 32 50 Ch-1 10 15 Ch-2 10 15 Ch-1 10 15 Ch-2 10 15 Ch-1 10 15 Ch-2 10 15 Ch-1 20 30 Ch-2 25 40 Ch-1 10 15 Ch-2 10 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 10 V, RL = 1.1 Ω ID ≅ 9.2 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-1 VDD = 10 V, RL = 1.1 Ω ID ≅ 9.2 A, VGEN = 10 V, Rg = 1 Ω tf Channel-2 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω IS TC = 25 °C td(off) ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD 4.5 Ch-1 40 Ch-2 0.8 1.2 IS = 2.5 A Ch-2 0.45 0.55 Ch-1 30 60 Ch-2 30 60 Ch-1 15 25 Ch-2 20 30 Ch-1 12 Ch-2 14 Ch-1 18 Ch-2 16 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 50 Ch-1 trr tb 2.5 Ch-2 IS = 9.2 A Channel-1 IF = 9.2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 www.vishay.com 3 Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 VGS = 10 V thru 4 V TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 8 30 20 VGS = 3 V 6 TC = 25 °C 4 10 2 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 1500 0.013 1200 0.011 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.009 VGS = 10 V 900 600 Coss 0.007 300 0.005 0 Crss 0 10 20 30 40 0 5 ID - Drain Current (A) 15 20 Capacitance On-Resistance vs. Drain Current 1.6 10 ID = 11.5 A 1.5 8 VDS = 10 V 6 VDS = 16 V 4 ID = 11.5 A VGS = 10 V, 4.5 V 1.4 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) 1.2 1.1 1.0 0.9 2 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 20 25 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 11.5 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 TJ = 25 °C 10 0.020 TJ = 125 °C 0.015 0.010 TJ = 25 °C 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 30 2.0 25 ID = 250 µA 20 Power (W) V GS(th) (V) 1.8 1.6 15 1.4 10 1.2 5 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 www.vishay.com 5 Si4340CDY Vishay Siliconix 18 3.0 15 2.5 12 2.0 Power (W) I D - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 1.5 6 1.0 3 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 www.vishay.com 7 Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 VGS = 10 V thru 4 V TC - 55 °C VGS = 3 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 6 TC = 25 °C 4 2 TC = 125 °C VGS = 2 V 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.009 2500 0.008 2000 3.0 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.007 VGS = 10 V 0.006 1500 1000 Coss 0.005 500 0.004 0 0 10 20 30 40 Crss 0 50 5 ID - Drain Current (A) 15 20 Capacitance On-Resistance vs. Drain Current 1.6 10 ID = 15.2 A 1.5 8 ID = 15.2 A VGS = 10 V, 4.5 V 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) VDS = 10 V 6 VDS = 16 V 4 2 1.3 1.2 1.1 1.0 0.9 0.8 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 28 35 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 15.2 A TJ = 25 °C 10 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.000 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 80 100 60 1 Power (W) I R - Reverse Current (mA) 10 10-1 VDS = 20 V 40 10-2 20 10-3 VDS = 16 V 10-4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 10 100 1000 Single Pulse Power Limited by RDS(on)* 100 µs 10 I D - Drain Current (A) 1 Time (s) Reverse Current vs. Junction Temperature 100 0.1 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 www.vishay.com 9 Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 25 5 4 Package Limited Power (W) I D - Drain Current (A) 20 15 10 3 2 5 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68398. Document Number: 68398 S09-2436-Rev. C, 16-Nov-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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