SI4348DY-T1-E3

Si4348DY Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0125 at VGS = 10 V 11 0.014 at VGS = 4.5 V 10 • TrenchFET® Gen II Power MOSFET Pb-free APPLICATIONS RoHS • High-Side DC/DC Conversion - Notebook - Desktop - Server • Notebook Logic DC/DC, Low-Side COMPLIANT SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4348DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 8.0 8.9 6.5 40 2.2 1.20 2.5 1.31 1.6 0.84 TJ, Tstg Operating Junction and Storage Temperature Range V 11 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF Typical Maximum 43 50 74 95 19 25 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72790 S-70316-Rev. B, 12-Feb-07 www.vishay.com 1 Si4348DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min 0.8 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 11 A 0.0105 0.0125 VGS = 4.5 V, ID = 10 A 0.0115 0.014 gfs VDS = 15 V, ID = 11 A 40 VSD IS = 2.2 A, VGS = 0 V 0.75 1.1 15 23 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 11 A Gate-Drain Charge Qgd 4.3 Gate Resistance Rg 0.5 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5 Ω 10 15 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 11 17 55 85 9 15 IF = 2.2 A, di/dt = 100 A/µs 22 35 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 4 V 3V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72790 S-70316-Rev. B, 12-Feb-07 Si4348DY Vishay Siliconix 2600 On-Resistance (Ω) 0.016 2080 0.008 Capacitance (pF) 0.020 - TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 4.5 V 0.012 1560 1040 r DS(on) C - VGS = 10 V 0.004 520 0.000 0 0 10 20 ID - 30 40 Ciss Coss Crss 0 50 5 10 VDS Drain Current (A) On-Resistance vs. Drain Current 25 30 Drain-to-Source Voltage (V) 1.6 VGS = 10 V ID = 11 A VDS = 15 V ID = 11 A 5 1.4 rDS(on) - On-Resistance (Normalized) Gate-to-Source Voltage (V) V GS 20 Capacitance 6 4 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 4 8 12 16 20 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.05 r DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 - 25 Qg - Total Gate Charge (nC) 50 I S - Source Current (A) - 15 0.04 ID = 11 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72790 S-70316-Rev. B, 12-Feb-07 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4348DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 30 0.2 24 0.0 Power (W) V GS(th) Variance (V) ID = 250 µA - 0.2 18 12 - 0.4 6 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10- 2 150 10- 1 1 TJ - Temperature (°C) 10 100 1000 Time (sec) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 rDS(on) Limited IDM Limited Drain Current (A) 10 1 ms 1 ID(on) Limited 10 ms ID - 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse dc BVDSS Limited 0.01 0.1 1 VDS - 10 100 Drain-to-Source Voltage (V) Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 71 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72790 S-70316-Rev. B, 12-Feb-07 Si4348DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72790. Document Number: 72790 S-70316-Rev. B, 12-Feb-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1