SI4368DY-T1-GE3

Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses Improvement • TrenchFET® Gen II Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low-Side DC/DC Conversion - Notebook, Server, VRM Module • Fixed Telecom SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4368DY-T1-E3 (Lead (Pb)-free) Si4368DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) ID IS Avalanch Current L = 0.1 mH Maximum Power Dissipationa TA = 25 °C TA = 70 °C 17 20 13 2.9 1.3 50 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range A 70 IAS PD V 25 IDM Continuous Source Current (Diode Conduction)a Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t  10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 72704 S11-0209-Rev. D, 14-Feb-11 www.vishay.com 1 Si4368DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea VDS 5 V, VGS = 10 V RDS(on) Forward Transconductancea Diode Forward Voltagea 30 µA A VGS = 10 V, ID = 25 A 0.0026 0.0032 VGS = 4.5 V, ID = 22 A 0.0029 0.0036 gfs VDS = 15 V, ID = 25 A 150 VSD IS = 2.9 A, VGS = 0 V 0.66  S 1.1 V Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Coss Crss Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 15  ID  1 A, VGEN = 10 V, Rg = 6  tr Turn-Off Delay Time td(off) Fall Time 80 17.5 0.8 td(on) Rise Time pF nC 6.5 Rg Turn-On Delay Time 8340 850 355 53 VDS = 15 V, VGS = 0 V, f = 1 MHz tf Source-Drain Reverse Recovery Time trr Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. IF = 2.9 A, dI/dt = 100 A/µs 1.2 1.8 25 38 20 30 172 260 41 62 42 60  ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 60 VGS = 10 V thru 3 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 2V 10 www.vishay.com 2 1 2 3 30 20 TC = 125 °C 10 0 0 40 4 5 25 °C - 55 °C 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Document Number: 72704 S11-0209-Rev. D, 14-Feb-11 Si4368DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.005 10000 0.004 8000 C - Capacitance (pF) RDS(on) - On-Resistance () Ciss VGS = 4.5 V 0.003 VGS = 10 V 0.002 6000 4000 0.001 2000 0.000 Coss Crss 0 0 10 20 30 40 50 0 5 ID - Drain Current (A) 10 25 30 Capacitance 6 1.6 VGS = 10 V ID = 25 A VDS = 15 V ID = 20 A 1.4 4 3 2 (Normalized) 5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.2 1.0 0.8 1 0 0 15 30 45 60 0.6 - 50 75 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 60 150 0.010 10 R DS(on) - On-Resistance () I S - Source Current (A) 15 TJ = 150 °C TJ = 25 °C 1 0.008 ID = 25 A 0.006 0.004 0.002 0.000 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72704 S11-0209-Rev. D, 14-Feb-11 10 www.vishay.com 3 Si4368DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 60 ID = 250 µA 50 0.0 40 Power (W) VGS(th) Variance (V) 0.2 - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 600 100 I D - Drain Current (A) Limited by RDS(on)* 10 10 ms 100 ms 1 1s 10 s 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72704 S11-0209-Rev. D, 14-Feb-11 Si4368DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72704. Document Number: 72704 S11-0209-Rev. D, 14-Feb-11 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000