SI4378DY-T1-E3

Si4378DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology • Qg Optimized • 100 % Rg Tested APPLICATIONS • Synchronous Rectification • Point-Of-Load SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free) Si4378DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C 19 20 13 70 1.3 40 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range A 2.9 IAS PD V 25 IDM Pulsed Drain Current (10 µs Pulse Width) Avalanche Current ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72918 S09-0226-Rev. C, 09-Feb-09 www.vishay.com 1 Si4378DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 4.5 V RDS(on) Forward Transconductancea 1.8 ± 100 µA 30 A VGS = 4.5 V, ID = 25 A 0.0022 0.0027 VGS = 2.5 V, ID = 22 A 0.0034 0.0042 gfs VDS = 10 V, ID = 25 A 150 VSD IS = 2.9 A, VGS = 0 V 0.72 Ω S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 650 Total Gate Charge Qg 55 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 8500 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 25 A 10 0.8 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 16 td(on) Turn-On Delay Time Rise Time pF 1250 IF = 2.9 A, dI/dt = 100 A/µs 1.3 2.0 85 130 65 100 140 210 50 80 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 5 V thru 2.5 V 50 40 I D - Drain Current (A) ID - Drain Current (A) 50 30 20 2V 10 40 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 72918 S09-0226-Rev. C, 09-Feb-09 Si4378DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10000 0.006 Ciss 8000 C - Capacitance (pF) RDS(on) - On-Resistance ( ) 0.005 VGS = 2.5 V 0.004 0.003 VGS = 4.5 V 0.002 6000 4000 Crss Coss 2000 0.001 0 0.000 0 10 20 30 40 50 0 60 4 8 20 Capacitance 6 1.8 VDS = 10 V ID = 25 A VGS = 4.5 V ID = 25 A - On-Resistance 1.6 4 3 2 1.4 (Normalized) 5 R DS(on) - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current VGS 12 1 1.2 1.0 0.8 0 0 10 20 30 40 50 60 0.6 - 50 70 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.015 50 R DS(on) - On-Resistance ( ) IS - Source Current (A) 0.012 TJ = 150 °C 10 TJ = 25 °C 0.006 0.003 0.000 1 0.00 ID = 25 A 0.009 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72918 S09-0226-Rev. C, 09-Feb-09 1.2 0 2 VGS 4 6 8 10 - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4378DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 ID = 250 µA 0.2 50 40 Power (W) V GS(th) (V) 0.0 - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 - 2 10 -1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 0.01 0.01 TC = 25 °C Single Pulse DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 67 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72918 S09-0226-Rev. C, 09-Feb-09 Si4378DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72918. Document Number: 72918 S09-0226-Rev. C, 09-Feb-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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