SI4386DY-T1-E3

Si4386DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 16 0.0095 at VGS = 4.5 V 13.5 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFETs • PWM Optimized • 100 % Rg Tested APPLICATIONS • DC/DC Conversion for PC SO-8 S 1 8 S 2 7 D D D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free) Si4386DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 70 °C ID IDM IS IAS EAS PD TJ, Tstg Operating Junction and Storage Temperature Range 10 s 16 13 2.8 3.1 2 Steady State 30 ± 20 11 9 ± 50 1.3 20 20 1.47 0.95 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Steady State RthJA RthJF Typical 34 71 18 Maximum 40 85 22 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 73109 S09-0226-Rev. D, 09-Feb-09 www.vishay.com 1 Si4386DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2.0 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 °C 10 Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V 40 A VGS = 10 V, ID = 16 A 0.0058 0.007 VGS = 4.5 V, ID = 13.5 A 0.0078 0.0095 gfs VDS = 15 V, ID = 16 A 51 VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 11 18 VDS = 15 V, VGS = 4.5 V, ID = 16 A 5.8 RDS(on) µA Ω S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 0.8 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.0 IF = 2.8 A, dI/dt = 100 A/µs 1.7 2.5 12 18 9 14 35 53 10 15 25 50 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 10 30 20 TC = 125 °C 10 25 °C 3V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 73109 S09-0226-Rev. D, 09-Feb-09 Si4386DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 2200 0.016 1760 C - Capacitance (pF) RD S(on) - On-Resistance (Ω) Ciss 0.012 VGS = 4.5 V 0.008 VGS = 10 V 1320 880 0.004 0.000 10 20 30 40 50 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 20 1.8 VDS = 15 V ID = 16 A VGS = 10 V ID = 16 A 1.6 4 3 2 1 1.4 (Normalized) 5 R DS(on) - On-Resistance VG S - Gate-to-Source Voltage (V) Crss 0 0 1.2 1.0 0.8 0 0 3 6 9 12 0.6 - 50 15 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 RD S(on) - On-Resistance (Ω) 0.030 TJ = 150 °C 10 TJ = 25 °C 0.024 0.018 ID = 16 A 0.012 0.006 0.000 1 0.00 - 25 Qg - Total Gate Charge (nC) 60 IS - Source Current (A) Coss 440 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73109 S09-0226-Rev. D, 09-Feb-09 10 www.vishay.com 3 Si4386DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 0.4 ID = 250 µA 0.2 40 Power (W) VG S(th) (V) 0.0 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25 °C Single Pulse DC 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67 °C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73109 S09-0226-Rev. D, 09-Feb-09 Si4386DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73109. Document Number: 73109 S09-0226-Rev. D, 09-Feb-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000