SI4388DY-T1-E3

Si4388DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V ID (A)a Qg (Typ.) 10.7 8 8.6 11.3 19 10.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter • Notebook Logic DC/DC SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.43 V at 2.0 A 2.0 D1 SO-8 G1 D1 1 8 G1 D1 2 7 S1/D2 G2 3 6 S1/D2 S2 4 5 S1/D2 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 Top View N-Channel 2 MOSFET Ordering Information: Si4388DY-T1-E3 (Lead (Pb)-free) Si4388DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ID TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS ISM IAS EAS PD Channel-1 30 ± 20 10.7 8.5 Channel-2 30 ± 12 11.3 -9 8.1b, c 6.4b, c 40 3.0 8.6b, c 6.9b, c 40 3.2 1.7b, c 40 15 11.2 3.3 2.1 1.8b, c 40 20 20 3.5 2.2 1.9b, c 1.2b, c 2.2b, c 1.3b, c TJ, Tstg Unit V A mJ W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ. Max. 54 65 RthJA t ≤ 10 s Maximum Junction-to-Ambientb, d RthJF 32 Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 112 °C/W (Channel-1) and 107 °C/W (Channel-2). Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 38 Channel-2 Typ. Max. 47 60 30 35 Unit °C/W www.vishay.com 1 Si4388DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VGS = 0 V, ID = 250 µA Ch-1 30 30 V VGS = 0 V, ID = 1 mA Ch-2 ΔVDS/TJ ID = 250 µA Ch-1 ΔVGS(th)/TJ ID = 250 µA Ch-1 VDS = VGS, ID = 250 µA Ch-1 1 3 VDS = VGS, ID = 1 mA Ch-2 0.6 1.6 VDS = 0 V, VGS = ± 20 V Ch-1 100 VDS = 0 V, VGS = ± 12 V Ch-2 100 VDS = 30 V, VGS = 0 V Ch-1 0.001 VGS(th) IGSS IDSS ID(on) RDS(on) gfs VDS = 30 V, VGS = 0 V Ch-2 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-1 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-2 27 -6 0.22 1 0.025 12 µA mA 100 VDS = 5 V, VGS = 10 V Ch-1 20 VDS = 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 8 A Ch-1 0.013 VGS = 10 V, ID = 8 A Ch-2 0.0125 0.015 VGS = 4.5 V, ID = 5 A Ch-1 0.017 0.024 0.017 A VGS = 5 V, ID = 5 A Ch-2 0.014 VDS = 15 V, ID = 8 A Ch-1 20 VDS = 15 V, ID = 8 A Ch-2 38 0.016 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Crss Qg Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Rg 946 Ch-2 2230 Ch-1 173 Ch-2 350 pF Ch-1 84 Ch-2 133 VDS = 15 V, VGS = 10 V, ID = 5 A Ch-1 18 VDS = 15 V, VGS = 10 V, ID = 5 A Ch-2 41 62 Ch-1 8 12 29 27 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 5 A Ch-2 19 Ch-1 2.55 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 5 A Ch-2 3.5 Ch-1 2.45 Ch-2 3.7 Ch-1 2.8 4.2 Ch-2 1.8 2.7 Qgs Qgd Ch-1 f = 1 MHz nC Ω Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 Si4388DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Max. Ch-1 8 15 Ch-2 7 14 Ch-1 10 15 Ch-2 10 15 Ch-1 20 30 Ch-2 40 60 Ch-1 8 15 Test Conditions Min. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 7 14 Ch-1 13 20 Ch-2 14 22 Ch-1 17 26 Ch-2 15 24 Ch-1 16 25 Ch-2 35 53 Ch-1 8 15 Ch-2 7 14 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD Ch-1 3 Ch-2 3.2 Ch-1 40 Ch-2 40 IS = 2 A Ch-1 0.8 1.1 IS = 2 A Ch-2 0.37 0.43 Ch-1 29 44 Ch-2 32 48 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 19 29 Ch-2 21 32 Reverse Recovery Fall Time ta Channel-2 IF = 2.2 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 12 Ch-2 13 Ch-1 17 Ch-2 19 Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 3 Si4388DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 2.0 VGS = 10 V thru 5 V 1.6 4V I D - Drain Current (A) I D - Drain Current (A) 32 24 16 8 1.2 0.8 25 °C 0.4 TC = 125 °C 3V - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 24 30 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.030 C - Capacitance (pF) R D S (o n) - On-Resistance ( ) Ciss 0.026 VGS = 4.5 V 0.022 0.018 VGS = 10 V 960 720 480 0.014 240 0.010 0 0 8 16 24 32 Coss Crss 0 40 6 12 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.7 ID = 5 A ID = 8 A 8 VDS = 20 V 2 (Normalized) VDS = 15 V 6 4 VGS = 10 V 1.5 VDS = 10 V R DS(on) - On-Resistance VG S - Gate-to-Source Voltage (V) 18 1.3 VGS = 4.5 V 1.1 0.9 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 16 20 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( °C) On-Resistance vs. Junction Temperature Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 Si4388DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 8 A I S - Source Current (A) R DS(on) - On-Resistance ( ) 150 °C 10 1 25 °C 0.1 0.01 0.08 0.06 0.04 125 °C 0.02 25 °C 0.00 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.5 120 0.2 100 80 - 0.1 ID = 5 mA Power (W) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) - 0.4 60 40 - 0.7 - 1.0 - 50 ID = 250 µA - 25 0 25 50 75 100 20 125 150 0 0.001 TJ - Temperature ( °C) 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 µs 1 100 µs 1 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 10 ms 100 ms dc 10 1 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 5 Si4388DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 ID - Drain Current (A) 10 7 5 2 0 0 25 50 75 100 125 150 TC - Case Temperature ( °C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 Si4388DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = P DMZ thJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 7 Si4388DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 40 VGS = 10 V thru 3 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 2V 25 °C 1.2 0.8 0.4 8 TJ = 125 °C - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.6 Output Characteristics 2.4 3.0 Transfer Characteristics 3000 C - Capacitance (pF) 0.016 0.015 VGS = 4.5 V 0.014 0.013 Ciss 2400 1800 1200 Coss VGS = 10 V 600 0.012 Crss 0 0.011 0 8 16 24 32 0 40 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.7 10 ID = 5 A ID = 8 A 1.5 8 VDS = 10 V RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance ( ) 1.2 VDS = 15 V 6 VDS = 20 V 4 VGS = 4.5 V 1.3 VGS = 10 V 1.1 0.9 2 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 36 45 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 Si4388DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 RDS(on) - On-Resistance ( ) I S - Source Current (A) ID = 8 A 150 °C 10 25 °C 1.0 0.08 0.06 0.04 125 °C 0.02 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 200 30 V 160 Power (W) 0.1 IR - Reverse (A) 2 0.01 24 V 0.001 0.0001 120 80 40 0.00001 0 0 25 50 75 100 125 150 0.001 TJ - Temperature (°C) 0.01 0.1 1 10 Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 µs 1 100 µs 0.1 10 ms 100 ms dc 1 ms TA = 25 °C Single Pulse 0.01 0.1 * VGS 1 100 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 9 Si4388DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 13 ID - Drain Current (A) 10 8 5 3 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 4.5 1.5 3.6 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.7 1.8 0.9 0.6 0.3 0.9 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 Si4388DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDM Z thJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74344. Document Number: 74344 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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