SI4401DDY-T1-GE3

Si4401DDY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 33 nC APPLICATIONS • Load Switch • POL SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET Ordering Information: Si4401DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 12.9 ID TA = 25 °C - 10.2b, c - 8.2b, c Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C - 5.3 - 2.1b, c IAS - 28 EAS 6.3 TC = 70 °C 4 PD TA = 25 °C W 2.5b, c 1.6b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 39 TC = 25 °C Maximum Power Dissipation A - 50 IS TA = 25 °C L = 0.1 mH V - 16.1 TC = 70 °C TA = 70 °C Continous Source-Drain Diode Current Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient t  10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. Document Number: 66801 S10-1471-Rev. A, 05-Jul-10 Symbol Typical Maximum RthJA 37 50 RthJF 16 20 Unit °C/W www.vishay.com 1 Si4401DDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 36 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 55 °C -5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS - 5 V, VGS = - 10 V 5 - 1.2 - 25 µA A VGS - 10 V, ID = - 10.2 A 0.012 0.015 VGS - 4.5 V, ID = - 8.4 A 0.018 0.022 VDS = - 15 V, ID = - 10.2 A 37  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3007 VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A pF 64 95 33 50 9.8 VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A VDD = - 20 V, RL = 2.4  ID  - 8.2 A, VGEN = - 4.5 V, Rg = 1  0.4 2 4 57 86 50 75 40 60 tf 17 26 td(on) 13 20 11 20 45 68 9 18 td(off) tr td(off) nC 15.7 f = 1 MHz td(on) tr 335 291 VDD = - 20 V, RL = 2.4  ID  - 8.2 A, VGEN = - 10 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 5.3 - 50 IS = - 8.2 A, VGS 0 V IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 36 54 ns 41 62 nC 20 16 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66801 S10-1471-Rev. A, 05-Jul-10 Si4401DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 50 V GS = 10 V thru 5 V V GS = 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 6 4 T C = 25 °C 2 10 T C = 125 °C V GS = 3 V 0.5 1.0 1.5 0 2.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 4500 0.024 3600 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) T C = - 55 °C 0 0 0.0 V GS = 4.5 V 0.018 V GS = 10 V 0.012 2700 1800 0.006 900 0 0 Coss Crss 0 10 20 30 40 50 0 8 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 40 1.8 10 1.6 8 V GS = 10.2 V; I D = 10.2 A V DS = 10 V 6 V DS = 20 V V DS = 32 V 4 2 1.4 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 10.2 A 1.2 V GS = 4.5 V; I D = 8.4 A 1.0 0.8 0 0 14 28 42 Qg - Total Gate Charge (nC) Gate Charge Document Number: 66801 S10-1471-Rev. A, 05-Jul-10 56 70 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4401DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 10.2 A T J = 150 °C 10 T J = 25 °C 1 0.04 0.03 T J = 125 °C 0.02 T J = 25 °C 0.01 0 0.1 0 0.5 1.0 2 1.5 4 VSD - Source-to-Drain Voltage (V) 8 10 On-Resistance vs. Gate-to-Source Voltage 2.5 80 2.2 60 Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 1.9 ID = 250 μA 40 20 1.6 1.3 - 50 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on) * 100 μs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 66801 S10-1471-Rev. A, 05-Jul-10 Si4401DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 18.0 ID - Drain Current (A) 13.5 9.0 4.5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 8 1.80 6 1.35 Power (W) Power (W) Current Derating* 4 0.90 0.45 2 0.00 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66801 S10-1471-Rev. A, 05-Jul-10 www.vishay.com 5 Si4401DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C /W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66801. www.vishay.com 6 Document Number: 66801 S10-1471-Rev. A, 05-Jul-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000