SI4401FDY-T1-GE3

Si4401FDY www.vishay.com Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • TrenchFET® Gen III p-channel power MOSFET • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S APPLICATIONS 4 G 3 S • Load switch • Battery switch G • Motor drive control PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration S • Adapter switch -40 0.0142 0.0183 31 -14 Single P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SO-8 Si4401FDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C -14 TC = 70 °C -11 TA =25 °C ID Continuous source-drain diode current -7.9 b, c Single pulse avalanche current Single pulse avalanche energy TA = 70 °C L = 0.1 mH -4.5 IS -2.2 b, c 20 20 5 IAS EAS TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C mJ 3.2 PD W 2.5 b, c 1.6 b, c TA = 70 °C Operating junction and storage temperature range A -80 a IDM TC = 25 °C V -9.9 b, c TA = 70 °C Pulsed drain current (t = 100 μs) UNIT TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t  10 s RthJA 40 50 Maximum junction-to-foot (drain) Steady state RthJF 21 25 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 85 °C/W e. TC = 25 °C S17-1783-Rev. A, 27-Nov-17 Document Number: 75996 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4401FDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -40 - - - V -33 - - 4.7 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -40 V, VGS = 0 V - - -1 VDS = -40 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = 0 V -10 - - A  VGS = -10 V, ID = -10 A - 0.0118 0.0142 VGS = -4.5 V, ID = -10 A - 0.0150 0.0183 VDS = -10 V, ID = -10 A - 45 - - 4000 - VDS = -20 V, VGS = 0 V, f = 1 MHz - 280 - - 270 - VDS = -20 V, VGS = -10 V, ID = -10 A - 66 100 VDS = -20 V, VGS = -4.5 V, ID = -10 A - 31 47 - 9.8 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -20 V, VGS = -4.5 V, ID = -10 A - 10 - 0.5 1.6 3 - 12 24 - 6 12 - 44 88 tf - 6 12 td(on) - 27 54 - 75 150 - 39 78 - 39 78 f = 1 MHz td(on) tr td(off) tr td(off) VDD = -20 V, RL = 2 , ID  -10 A, VGEN = -10 V, Rg = 1  VDD = -20 V, RL = 2 , ID  -10 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = -5 A, VGS = 0 V - - -4.5 - - -80 - -0.77 -1.1 A V Body diode reverse recovery time trr - 24 48 ns Body diode reverse recovery charge Qrr - 16 32 nC Reverse recovery fall time ta - 12 - Reverse recovery rise time tb - 12 - IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1783-Rev. A, 27-Nov-17 Document Number: 75996 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4401FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 100 VGS = 10 V thru 5 V VGS = 4 V 64 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 80 60 40 VGS = 3 V 20 48 32 TC = 25 °C TC = 125 °C 16 TC = -55 °C VGS = 2 V 0 0 1 2 3 4 0 0 5 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 0.025 5500 10000 10000 4400 1000 0.015 VGS = 10 V 100 2200 100 1100 0.005 0 16 32 48 64 Crss 0 10 0 Coss 10 0 80 5 10 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 8 1000 1st line 2nd line VDS = 10 V, 20 V, 30 V 4 100 2 0 10 14 28 42 56 70 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 6 10000 1.8 10000 0 25 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 15 ID = 10 A 1.6 VGS = 10 V 1000 1.4 VGS = 4.5 V 1.2 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1783-Rev. A, 27-Nov-17 1st line 2nd line 0.010 1000 3300 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 75996 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4401FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 TJ = 150 °C 1 TJ = 25 °C 100 0.1 10000 ID = 10 A 0.048 1000 0.036 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) 0.060 10000 100 TJ = 125 °C 0.024 100 0.012 TJ = 25 °C 0.01 0 10 0 0.3 0.6 0.9 1.2 10 0 1.5 2 4 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 1.0 10000 500 10000 400 0.7 ID = 250 μA 1000 300 1st line 2nd line ID = 5 mA 0.1 2nd line Power (W) 1000 0.4 1st line 2nd line 2nd line VGS(th) - Variance (V) 6 200 100 100 -0.2 100 -0.5 10 -50 -25 0 25 50 75 10 0 0.0001 100 125 150 0.001 0.01 0.1 1 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 10 100 μs ID limited 1 ms 1 1000 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms Limited by RDS(on) (1) 100 ms 100 1s 0.1 10 s TA = 25 °C Single pulse 0.01 0.01 (1) DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1783-Rev. A, 27-Nov-17 Document Number: 75996 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4401FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 16 10000 1000 9.6 1st line 2nd line 2nd line ID - Drain Current (A) 12.8 6.4 100 3.2 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 2 2 10000 10000 1.6 1.6 1.2 1st line 2nd line 0.8 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 1.2 0.8 100 0.4 100 0.4 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TA - Ambient Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Foot Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1783-Rev. A, 27-Nov-17 Document Number: 75996 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4401FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.1 0.2 Notes: 0.1 PDM t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 85 °C/W 0.05 0.02 100 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 0.0001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Foot                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75996. S17-1783-Rev. A, 27-Nov-17 Document Number: 75996 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000