Si4411DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)
0.010 at VGS = - 10 V
- 13
0.0155 at VGS = - 4.5 V
- 10
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook
- Load Switch
- Battery Switch
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
Ordering Information: Si4411DY-T1-E3 (Lead (Pb)-free)
Si4411DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Steady State
- 30
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 13
-9
- 10.5
- 7.5
- 50
- 2.7
A
- 1.36
3.0
1.5
1.9
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
± 20
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
10 s
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
33
Maximum
42
Unit
70
85
°C/W
16
21
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72149
S09-0767-Rev. D, 04-May-09
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1
Si4411DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
V
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
- 10
VDS = - 5 V, VGS = - 10 V
RDS(on)
- 3.0
± 100
µA
- 30
A
VGS = - 10 V, ID = - 13 A
0.008
0.010
VGS = - 4.5 V, ID = - 10 A
0.0125
0.0155
gfs
VDS = - 15 V, ID = - 13 A
40
VSD
IS = - 2.7 A, VGS = 0 V
- 0.74
- 1.1
43
65
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
18.5
Gate Resistance
Rg
3.4
VDS = - 15 V, VGS = - 5 V, ID = - 13 A
td(on)
Turn-On Delay Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Ω
18
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
tr
Rise Time
nC
8.5
IF = - 2.1 A, dI/dt = 100 A/µs
30
15
25
140
250
75
120
60
100
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 4 V
40
ID - Drain Current (A)
I D - Drain Current (A)
40
30
20
3V
10
30
20
TC = 125 °C
10
25 °C
- 55 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72149
S09-0767-Rev. D, 04-May-09
Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5500
0.016
4400
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance ( )
0.020
0.012
VGS = 10 V
0.008
Ciss
3300
2200
Coss
0.004
1100
0.000
0
Crss
0
10
20
30
40
50
0
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
VDS = 15 V
ID = 13 A
5
VGS = 10 V
ID = 13 A
1.4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
On-Resistance vs. Drain Current
6
4
3
2
1.2
1.0
0.8
1
0
0
10
20
30
40
0.6
- 50
50
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
50
0.030
0.024
R DS(on) - On-Resistance (
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.0
- 25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
6
ID = 13 A
0.018
0.012
0.006
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72149
S09-0767-Rev. D, 04-May-09
10
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3
Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50
40
ID = 250 µA
0.4
30
Power (W)
V GS(th) Variance (V)
0.6
0.2
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
600
100
Limited by R DS(on) *
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TC = 25 °C
Single Pulse
0.01
0.1
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72149
S09-0767-Rev. D, 04-May-09
Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72149.
Document Number: 72149
S09-0767-Rev. D, 04-May-09
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Revision: 01-Jan-2022
1
Document Number: 91000