SI4435FDY-T1-GE3

Si4435FDY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • TrenchFET® Gen III p-channel power MOSFET • 100% Rg tested • Material categorization:  for definitions of compliance www.vishay.com/doc?99912 Top View 1 S 2 S 3 S please see APPLICATIONS 4 G S • Adapter switch • Load switch • DC/DC converters G • High speed switching PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) a Configuration -30 0.019 0.030 13.5 -12.6 e Single • Power management in battery-operated, mobile and wearable devices P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SO-8 Si4435FDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS ± 20 TC = 70 °C TA =25 °C -10 a ID -8.6 b, c -6.9 b, c TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current TA = 70 °C -4 IS -1.9 b, c TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C 4.8 3.1 PD W 2.2 b, c 1.4 b, c TA = 70 °C Operating junction and storage temperature range A -32 a IDM TC = 25 °C V -12.6 e TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d Maximum junction-to-case (drain) SYMBOL TYPICAL MAXIMUM t  10 s RthJA 45 56 Steady state RthJF 20 26 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 100 °C/W e. TC = 25 °C S17-0342-Rev. A, 06-Mar-17 Document Number: 75339 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435FDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - - V -25 - - 4.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = 10 V -10 - - A  VGS = -10 V, ID = -9 A - 0.015 0.019 VGS = -4.5 V, ID = -7 A - 0.023 0.030 VDS = -10 V, ID = -9 A - 25 - - 1500 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 180 - - 150 - VDS = -15 V, VGS = -10 V, ID = -5 A - 28 42 VDS = -15 V, VGS = -4.5 V, ID = -5 A - 13.5 21 - 4.4 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -4.5 V, ID = -5 A - 4.3 - 0.6 3.3 6.6 - 26 50 - 30 60 - 21 40 tf - 16 30 td(on) - 9 20 - 18 35 - 23 45 - 15 30 f = 1 MHz td(on) tr td(off) tr td(off) VDD = -15 V, RL = 15 , ID  -1 A, VGEN = -4.5 V, Rg = 1  VDD = -15 V, RL = 15 , ID  -1 A, VGEN = -10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = -5 A, VGS = 0 V - - -4 - - -32 - -0.82 -1.2 A V Body diode reverse recovery time trr - 20 40 ns Body diode reverse recovery charge Qrr - 10 20 nC Reverse recovery fall time ta - 10 - Reverse recovery rise time tb - 10 - IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0342-Rev. A, 06-Mar-17 Document Number: 75339 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 40 10000 40 1000 20 100 10 30 1000 20 1st line 2nd line VGS = 4 V 2nd line ID - Drain Current (A) 30 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V TC = 25 °C 100 10 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 10 0 0.5 1 1.5 2 10 0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 10000 10000 2000 1000 0.02 100 VGS = 10 V 0.01 1500 1000 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) Ciss 0.03 1st line 2nd line 1000 100 500 Coss 0 10 20 30 Crss 0 10 0 0 40 10 5 10 15 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title Axis Title 10 1.5 ID = 5 A VDS = 15 V 1000 1st line 2nd line 6 VDS = 24 V VDS = 7.5 V 4 100 2 0 10 0 5 10 15 20 25 30 2nd line RDS(on) - On-Resistance (Normalized) 10000 8 30 10000 VGS = 10 V ID = 9 A 1.4 1.3 1000 1.2 VGS = 4.5V 1.1 1.0 100 0.9 0.8 0.7 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0342-Rev. A, 06-Mar-17 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.04 2nd line VGS - Gate-to-Source Voltage (V) 3 Document Number: 75339 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.05 10000 1000 TJ = 25 °C 1 100 0.1 10 0 0.2 0.4 0.6 0.8 1.0 1000 0.03 TJ = 150 °C 0.02 100 TJ = 25 °C 0.01 0 1.2 0 2 4 6 8 10 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 100 10000 2.2 2.0 10000 80 1000 1000 1.6 ID = 250 μA 1.4 60 1st line 2nd line 2nd line Power (W) 1.8 1st line 2nd line 2nd line VGS(th) (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 9 A 0.04 40 100 100 20 1.2 1.0 10 -50 -25 0 25 50 75 0 0.0001 0.001 0.01 100 125 150 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title Limited by RDS(on) 10000 (1) 10 100 μs 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 1 10 ms 100 ms 1s 10 s 0.1 100 DC TA = 25 °C Single pulse 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0342-Rev. A, 06-Mar-17 Document Number: 75339 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 15 10000 5 12 1000 100 3 1st line 2nd line 6 1000 4 2nd line Power (W) 9 1st line 2nd line 2nd line ID - Drain Current (A) 10000 6 3 2 100 1 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TF - Foot Temperature (°C) 2nd line TF - Foot Temperature (°C) 2nd line Current Derating a Power, Junction-to-Foot 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0342-Rev. A, 06-Mar-17 Document Number: 75339 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435FDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 Notes: 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 PDM 0.1 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 100 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Foot                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75339. S17-0342-Rev. A, 06-Mar-17 Document Number: 75339 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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