Si4453DY
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.0065 at VGS = - 4.5 V
- 14
- 12
0.00775 at VGS = - 2.5 V
- 13
0.01025 at VGS = - 1.8 V
- 12
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Battery Switch
S
SO-8
S
S
S
G
8
D
2
7
D
3
6
D
4
5
D
1
G
Top View
D
Ordering Information: Si4453DY-T1-E3 (Lead (Pb)-free)
Si4453DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 14
- 10
-8
- 50
- 2.7
- 1.36
3.0
1.5
1.9
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 11.5
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
33
42
70
84
16
21
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
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1
Si4453DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.4
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 600 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 14 A
0.0051
0.0065
RDS(on)
VGS = - 2.5 V, ID = - 13 A
0.0062
0.00775
VGS = - 1.8 V, ID = - 12 A
0.0082
0.01025
gfs
VDS = - 6 V, ID = - 14 A
80
VSD
IS = - 2.7 A, VGS = 0 V
- 0.6
- 1.1
110
165
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
- 0.9
V
± 100
nA
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 70 °C
- 10
µA
- 30
A
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
VDS = - 6 V, VGS = - 5 V, ID = - 14 A
27.5
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
110
170
235
350
410
620
430
tf
285
Gate Resistance
Rg
3.6
Source-Drain Reverse Recovery Time
trr
Fall Time
nC
15
IF = - 2.1 A, dI/dt = 100 A/µs
ns
Ω
180
270
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
50
50
VGS = 5 thru 2 V
40
30
I D - Drain Current (A)
I D - Drain Current (A)
40
1.5 V
20
10
30
20
TC = 125 °C
10
25 °C
- 5 5 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
Si4453DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
12000
Ciss
10000
0.012
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.015
VGS = 1.8 V
0.009
VGS = 2.5 V
0.006
8000
6000
Coss
4000
VGS = 4.5 V
0.003
Crss
2000
0.000
0
0
8
16
24
32
40
0
2
4
ID - Drain Current (A)
10
12
Capacitance
1.6
6
VGS = 4.5 V
ID = 14 A
VDS = 6 V
ID = 14 A
5
1.4
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
3
2
1
0
26
52
78
104
130
1.0
0.8
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.030
30
R DS(on) - On-Resistance (Ω)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
1.2
0.6
- 50
0
I S - Source Current (A)
6
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
1.2
0.024
ID = 14 A
0.018
0.012
0.006
0.000
0.0
1.6
3.2
4.8
6.4
8.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si4453DY
Vishay Siliconix
0.6
100
0.4
80
ID = 600 µA
60
Power (W)
V GS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
0.2
0.0
40
20
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
1 ms
ID - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
DC
TC = 25 °C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VDS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
Si4453DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72175.
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
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Revision: 01-Jan-2022
1
Document Number: 91000