SI4465ADY-T1-GE3

Si4465ADY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 1.8 V Rated • 100 % Rg Tested S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465ADY-T1-E3 (Lead (Pb)-free) Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C IDM IS ISM Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation a, b ID TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Limit -8 ±8 - 13.7 - 11 - 20 - 16 - 40 - 2.5 40 3.0 1.95 6.5 4.2 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 34 67 15 Maximum 41 80 19 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t ≤ 10 s. Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 Si4465ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Max. Unit - 1.0 V ± 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ − 5 V, VGS = - 4.5 V RDS(on) Typ. - 20 µA A VGS = - 4.5 V, ID = - 14 A 0.0075 0.009 VGS = - 2.5 V, ID = - 12 A 0.0092 0.011 VGS = 1.8 V, ID = 10 A 0.013 0.016 gfs VDS = - 10 V, ID = - 14 A 58 VSD IS = - 2.1 A, VGS = 0 V - 0.57 - 1.2 55 85 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 10 Rg 2.5 3.8 td(on) 33 50 170 255 Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = - 4 V, VGS = - 4.5 V, ID = - 14 A VDD = - 4 V, RL = 4 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 6 Ω tf Source-Drain Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = - 2.1 A, dI/dt = 100 A/µs nC 6 168 255 112 170 85 130 81 125 Ω ns nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 Si4465ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 2.0 VGS = 5 thru 2 V 1.6 1.5 V I D – Drain Current (A) I D – Drain Current (A) 32 24 16 8 1.2 TC = 125 °C 0.8 25 °C 0.4 1V - 55 °C 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.6 0.9 1.2 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 8500 0.017 6800 VGS = 1.8 V 0.014 0.011 VGS = 2.5 V 0.008 1.5 Ciss 5100 3400 Coss 1700 Crss VGS = 4.5 V 0.005 0 8 16 24 32 0 0.0 40 1.6 3.2 4.8 6.4 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 8.0 1.5 8.0 ID = 14 A VGS = 1.8 V ID = 14 A 6.4 R DS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 0.3 VDS – Drain-to-Source Voltage (V) C – Capacitance (pF) RDS(on) – On-Resistance (Ω) 0 0.0 VDS = 4 V 4.8 3.2 VDS = 6 V 1.3 1.1 VGS = 4.5 V ID = 14 A 0.9 1.6 0.0 0 21 42 63 Qg – Total Gate Charge (nC) Gate Charge Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 84 105 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4465ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 T j = 150 °C R DS(on) – On-Resistance (Ω) IS – Source Current (A) 100 10 T j = 25 °C 1 0.04 0.03 0.02 125 °C 0.01 25 °C 0 0.00 0 0.6 0.3 1.2 0.9 0 1.5 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 100 0.3 0.2 Power (W) V GS(th) Variance (V) 80 ID = 5 mA 0.1 ID = 250 µA 60 40 0.0 20 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited I D - Drain Current (A) Limited by R DS(on)* 10 10 ms 100 ms 1 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 10 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operatin Area www.vishay.com 4 Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 Si4465ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 ID – Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC – Case Temperature (°C) 8.0 2.0 6.4 1.6 Power Dissipation (W) Power Dissipation (W) Current Derating 4.8 3.2 1.6 1.2 0.8 0.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC – Case Temperature (°C) TA – Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 5 Si4465ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C 1. Duty Cycle, D = 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73856. www.vishay.com 6 Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000