SI4483ADY-T1-GE3

Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 44.8 nC APPLICATIONS SO-8 S • Adaptor Switch S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 25 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 15.4 ID TA = 25 °C - 13.5a, b - 10.9a, b IDM Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation TC = 25 °C - 2.4a, b IAS 20 EAS 20 TC = 25 °C 5.9 TC = 70 °C 3.8 PD TA = 25 °C mJ 2.9a, b W 1.9a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 70 - 4.9 IS TA = 25 °C L = 0.1 mH V - 19.2 TC = 70 °C TA = 70 °C Continuous Source-Drain Diode Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Symbol Typical Maximum t 10 s RthJA 33 42 Steady State RthJF 16 21 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on TC = 25 °C. Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 www.vishay.com 1 Si4483ADY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 30 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.6 V IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS  - 10 V, VGS = - 10 V 5.3 - 1.2 - 2.1 - 30 µA A VGS = - 10 V, ID = - 10 A 0.0073 0.0088 VGS = - 4.5 V, ID = - 7 A 0.0127 0.0153 VDS = - 10 V, ID = - 10 A 32  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 3900 VDS = - 15 V, VGS = 0 V, f = 1 MHz td(off) pF 645 VDS = - 15 V, VGS = - 10 V, ID = - 10 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 90 135 44.8 68 12.2 f = 1 MHz VDD = - 15 V, RL = 1.5  ID  - 10 A, VGEN = - 10 V, Rg = 1  0.4 1.8 3.6 14 28 13 25 49 90 tf 13 25 td(on) 70 120 150 280 43 80 28 55 tr td(off) nC 21.7 td(on) tr 715 VDD = - 15 V, RL = 1.5  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 4.9 - 70 IS = - 3 A, VGS = 0 V - 0.72 - 1.2 A V Body Diode Reverse Recovery Time trr 41 70 ns Body Diode Reverse Recovery Charge Qrr 41 70 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 18 23 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 Si4483ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 10 VGS = 10 V thru 5 V 8 42 I D - Drain Current (A) I D - Drain Current (A) 56 VGS = 4 V 28 14 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 6000 0.024 4800 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TC = - 55 °C 0 0.018 VGS = 4.5 V 0.012 VGS = 10 V 3600 2400 Coss 0.006 1200 Crss 0 0 0 14 28 42 56 70 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 ID = 10 A ID = 10 A 8 VDS = 10 V VDS = 15 V 4 VDS = 20 V 1.5 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4483ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.10 ID = 10 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.08 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 200 0.6 160 0.4 Power (W) VGS(th) Variance (V) ID = 250 µA ID = 1 mA 0.2 120 80 0.0 40 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 Si4483ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 22.0 I D - Drain Current (A) 17.6 13.2 8.8 4.4 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 8.0 2.0 6.4 1.6 Power (W) Power (W) Current Derating* 4.8 3.2 1.6 1.2 0.8 0.4 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 www.vishay.com 5 Si4483ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68982. www.vishay.com 6 Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000