SI4483EDY-T1-GE3

Si4483EDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.0085 at VGS = - 10 V - 14 0.014 at VGS = - 4.5 V - 11 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • ESD Protection: 3000 V APPLICATIONS • Notebook PC - Load Switch - Adapter Switch S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G 7100 Ω Top View P-Channel Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free) Si4483EDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 14 - 10 -8 - 50 - 2.7 - 1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range V - 11 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 33 42 70 85 16 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72862 S-83038-Rev. D, 22-Dec-08 www.vishay.com 1 Si4483EDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 1.0 Typ. Max. Unit Static Gate Threshold Voltage - 3.0 V VDS = 0 V, VGS = ± 4.5 V ±1 µA VDS = 0 V, VGS = ± 25 V ± 10 mA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 10 IGSS Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a - 30 A VGS = - 10 V, ID = - 14 A 0.007 0.0085 VGS = - 4.5 V, ID = - 11 A 0.0115 0.014 gfs VDS = - 15 V, ID = - 14 A 60 VSD IS = - 2.7 A, VGS = 0 V - 0.74 - 1.1 10 15 20 30 42 65 50 80 RDS(on) Forward Transconductancea Diode Forward Voltage VDS = - 5 V, VGS = - 10 V µA Ω S V Dynamicb td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tf Fall Time µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 100 I GSS - Gate Current (mA) I GSS - Gate Current (mA) 10 6 4 2 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0 0.0001 0 www.vishay.com 2 5 10 15 20 25 30 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 30 Document Number: 72862 S-83038-Rev. D, 22-Dec-08 Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 thru 4 V 3V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 30 20 TC = 125 °C 10 10 - 55 °C 25 °C 0 0 1 2 3 4 0 0.0 5 0.5 1.0 VDS - Drain-to-Source Voltage (V) 1.4 VGS = 10 V 0.004 3.0 3.5 125 150 1.2 1.0 0.8 0.000 0 10 20 30 40 0.6 - 50 50 - 25 0 25 50 75 100 ID - Drain Current (A) TJ - Junction Temperature (°C) On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 50 0.05 ID = 14 A TJ = 150 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) (Normalized) 0.016 R DS(on) - On-Resistance R DS(on) - On-Resistance (Ω) 1.6 0.008 2.5 Transfer Characteristics 0.020 VGS = 4.5 V 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.012 1.5 10 TJ = 25 °C 1 0.04 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72862 S-83038-Rev. D, 22-Dec-08 10 www.vishay.com 3 Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 50 0.6 40 0.4 Power (W) VGS(th) Variance (V) ID = 250 µA 0.2 30 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 1 0.1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 0.01 0.1 TC = 25 °C Single Pulse 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72862 S-83038-Rev. D, 22-Dec-08 Si4483EDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72862. Document Number: 72862 S-83038-Rev. D, 22-Dec-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000