Si4505DY
Vishay Siliconix
N- and P-Channel MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
-8
RDS(on) (Ω)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
ID (A)
0.018 at VGS = 10 V
7.8
0.027 at VGS = 4.5 V
6.4
0.042 at VGS = - 4.5 V
- 5.0
0.060 at VGS = - 2.5 V
- 4.0
APPLICATIONS
• Level Shift
• Load Switch
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D1
S2
G2
G1
Top View
Ordering Information: Si4505DY-T1-E3 (Lead (Pb)-free)
Si4505DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
10 s
P-Channel
Steady State
10 s
Steady State
Drain-Source Voltage
VDS
30
-8
Gate-Source Voltage
VGS
± 20
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a, b
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
V
7.8
6.0
- 5.0
- 3.8
6.0
5.2
- 3.6
- 3.0
IDM
Pulsed Drain Current
Maximum Power Dissipationa, b
ID
30
- 30
1.8
1.0
- 1.8
- 1.0
2
1.20
2
1.2
1.3
0.75
1.3
0.75
TJ, Tstg
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
P-Channel
Typ.
Max.
Typ.
Max.
50
62.5
50
62.5
85
105
85
105
30
40
30
40
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 71826
S09-0868-Rev. C, 18-May-09
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1
Si4505DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µA
N-Ch
0.8
1.8
VDS = VGS, ID = - 250 µA
P-Ch
- 0.45
- 1.0
VDS = 0 V, VGS = ± 20 V
N-Ch
± 100
VDS = 0 V, VGS = ± 8 V
P-Ch
± 100
VDS = 30 V, VGS = 0 V
N-Ch
1
VDS = - 8 V, VGS = 0 V
P-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
P-Ch
VDS = 5 V, VGS = 10 V
N-Ch
20
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 20
ID(on)
RDS(on)
gfs
VSD
V
nA
µA
-5
A
VGS = 10 V, ID = 7.8 A
N-Ch
0.015
0.018
VGS = - 4.5 V, ID = - 5.0 A
P-Ch
0.030
0.042
VGS = 4.5 V, ID = 6.4 A
N-Ch
0.022
0.027
VGS = - 2.5 V, ID = - 4.0 A
P-Ch
0.048
0.060
VDS = 15 V, ID = 7.8 A
N-Ch
18
VDS = - 15 V, ID = - 5.0 A
P-Ch
12
IS = 1.8 A, VGS = 0 V
N-Ch
0.73
1.1
IS = - 1.8 A, VGS = 0 V
P-Ch
- 0.75
- 1.1
Ω
S
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
N-Channel
VDS = 15 V, VGS = 5 V, ID = 7.8 A
P-Channel
VDS = - 4 V, VGS = - 5 V, ID = - 5.0 A
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
P-Channel
VDD = - 4 V, RL = 4 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.8 A, dI/dt = 100 A/µs
Turn-Off Delay Time
td(off)
N-Ch
11.5
20
P-Ch
13.5
20
N-Ch
3
P-Ch
2.2
N-Ch
4
P-Ch
3
nC
N-Ch
15
25
P-Ch
21
40
N-Ch
8
15
P-Ch
45
70
N-Ch
35
55
P-Ch
60
100
N-Ch
10
20
P-Ch
55
85
N-Ch
30
60
P-Ch
50
100
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71826
S09-0868-Rev. C, 18-May-09
Si4505DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
40
VGS = 10 V thru 5 V
TC = - 55 °C
4V
I D - Drain Current (A)
ID - Drain Current (A)
24
16
3V
24
125 °C
16
8
8
0
0
0
2
4
6
8
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.05
2000
0.04
1600
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
25 °C
32
32
0.03
VGS = 4.5 V
0.02
VGS = 10 V
5
Ciss
1200
800
Coss
0.01
400
Crss
0.00
0
0
6
12
18
24
30
0
6
I D - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
6
5
VDS = 15 V
ID = 7.8 A
1.4
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
18
4
3
2
VGS = 10 V
ID = 7.8 A
1.2
1.0
0.8
1
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71826
S09-0868-Rev. C, 18-May-09
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4505DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
0.06
ID = 7.8 A
0.04
0.02
0.00
1
0.00
0.08
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
10
100
ID = 250 µA
80
0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
60
40
- 0.4
20
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
1 mS
I D - Drain Current (A)
10
1
10 mS
TA = 25 °C
Single Pulse
0.1
100 mS
1S
10 S
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 71826
S09-0868-Rev. C, 18-May-09
Si4505DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71826
S09-0868-Rev. C, 18-May-09
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Si4505DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
40
VGS = 5 V thru 3.5 V
TC = - 55 °C
I D - Drain Current (A)
I D - Drain Current (A)
25 °C
24
32
3V
24
2.5 V
16
2V
8
125 °C
18
12
6
1.5 V
0
0.0
0
0
2
4
6
8
10
1.0
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
3.5
2000
0.08
Ciss
C - Capacitance (pF)
1600
VGS = 2.5 V
0.06
0.04
VGS = 4.5 V
1200
Coss
800
Crss
0.02
400
0.00
0
5
10
15
20
0
25
0
2
I D - Drain Current (A)
4
6
8
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
6
1.6
5
VDS = - 4 V
ID = 5 A
1.4
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
1.5
VDS - Drain-to-Source Voltage (V)
0.10
RDS(on) - On-Resistance (Ω)
0.5
4
3
2
VGS = 4.5 V
ID = 5 A
1.2
1.0
0.8
1
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
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6
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 71826
S09-0868-Rev. C, 18-May-09
Si4505DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.15
0.10
ID = 5 A
0.05
0.00
1
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
100
ID = 250 µA
0.3
80
0.2
Power (W)
V GS(th) Variance (V)
2
0.1
60
40
0.0
20
- 0.1
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I D - Drain Current (A)
10
Limited
by R DS(on)*
1 mS
10 mS
1
0.1
0.01
0.1
100 mS
TA = 25 °C
Single Pulse
1S
10 S
DC
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 71826
S09-0868-Rev. C, 18-May-09
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Si4505DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71826.
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Document Number: 71826
S09-0868-Rev. C, 18-May-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
