SI4544DY-T1-E3

Si4544DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC ID (A) 0.035 at VGS = 10 V ± 6.5 0.050 at VGS = 4.5 V ± 5.4 0.045 at VGS = - 10 V ± 5.7 0.090 at VGS = - 4.5 V ± 4.0 S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G2 D G1 Top View Ordering Information: Si4544DY-T1-E3 (Lead (Pb)-free) Si4544DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 ± 6.5 ± 5.7 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range ID ± 5.4 ± 4.0 IDM ± 20 ± 20 IS 1.7 PD Unit V A - 1.7 2.4 1.5 W TJ, Tstg - 55 to 150 Symbol N- or P-Channel Unit RthJA 52 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70768 S09-0868-Rev. D, 18-May-09 www.vishay.com 1 Si4544DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1.0 VDS = VGS, ID = - 250 µA P-Ch - 1.0 VDS = 0 V, VGS = ± 20 V IGSS VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS V N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch -5 VDS ≥ 5 V, VGS = 10 V N-Ch 20 VDS ≥ - 5 V, VGS = - 10 V P-Ch - 20 VDS ≥ 5 V, VGS = 4.5 V N-Ch 5 VDS ≥ - 5 V, VGS = - 4.5 V P-Ch -5 VGS = 10 V, ID = 6.5 A N-Ch 0.027 0.035 VGS = - 10 V, ID = - 5.7 A P-Ch 0.036 0.045 VGS = 4.5 V, ID = 5.4 A N-Ch 0.038 0.050 VGS = - 4.5 V, ID = - 4.0 A P-Ch 0.060 0.090 VDS = 15 V, ID = 6.5 A N-Ch 15 VDS = - 15 V, ID = - 5.7 A P-Ch 9 IS = 1.7 A, VGS = 0 V N-Ch 0.75 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 0.75 - 1.2 N-Ch 18 35 P-Ch 19 40 N-Ch 4.2 P-Ch 4.5 ID(on) RDS(on) gfs VSD nA µA A Ω S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time N-Channel VDS = 15 V, VGS = 10 V, ID = 6.5 A P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 5.7 A N-Channel VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr td(off) tf N-Ch 3.5 P-Ch 3.6 N-Ch 13 P-Ch 13 30 N-Ch 12 30 30 P-Ch 15 30 N-Ch 31 60 P-Ch 37 70 N-Ch 10 30 P-Ch 14 30 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 30 70 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 35 70 P-Channel VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω trr nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70768 S09-0868-Rev. D, 18-May-09 Si4544DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 20 20 VGS = 10 V thru 5 V 4V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 12 8 TC = 125 °C 4 4 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 1500 Ciss 0.05 1200 0.04 VGS = 4.5 V 0.03 VGS = 10 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 VDS - Drain-to-Source Voltage (V) 0.06 0.02 900 600 Coss 300 0.01 Crss 0 0.00 0 4 8 12 16 0 20 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 VDS = 15 V ID = 6.5 A 8 1.6 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1 6 4 VGS = 10 V ID = 6.5 A 1.4 1.2 1.0 0.8 2 0.6 0 0 4 8 12 16 20 0.4 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70768 S09-0868-Rev. D, 18-May-09 150 www.vishay.com 3 Si4544DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.12 R DS(on) - On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.09 ID = 6.5 A 0.06 0.03 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 3 5 7 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 40 32 0.0 24 Power (W) VGS(th) Variance (V) ID = 250 µA 0.3 - 0.3 - 0.6 16 8 - 0.9 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 30 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 52 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70768 S09-0868-Rev. D, 18-May-09 Si4544DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 20 20 VGS = 10 V thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 4V 8 4 12 8 TC = 125 °C 4 25 °C 3V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 1500 0.16 0.12 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 1200 VGS = 4.5 V VGS = 10 V 900 600 Coss 0.04 300 Crss 0.00 0 0 4 8 12 16 20 0 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.8 VDS = 10 V ID = 5.7 A 1.6 VGS = 10 V ID = 5.7 A 8 6 4 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) 1.2 1.0 0.8 2 0.6 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70768 S09-0868-Rev. D, 18-May-09 16 20 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si4544DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.20 RDS(on) - On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.16 0.12 0.08 ID = 5.7 A 0.04 0.00 1 0 0.25 0.50 0.75 1.00 1.25 VSD - Source-to-Drain Voltage (V) 0 1.50 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.8 40 0.4 30 ID = 250 µA Power (W) VGS(th) Variance (V) 0.6 0.2 0.0 20 - 0.2 10 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 30 Time (s) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 52 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70768. www.vishay.com 6 Document Number: 70768 S09-0868-Rev. D, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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