Si4544DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
RDS(on) (Ω)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
ID (A)
0.035 at VGS = 10 V
± 6.5
0.050 at VGS = 4.5 V
± 5.4
0.045 at VGS = - 10 V
± 5.7
0.090 at VGS = - 4.5 V
± 4.0
S2
SO-8
S1
1
8
D
G1
2
7
D
S2
3
6
D
G2
4
5
D
G2
D
G1
Top View
Ordering Information: Si4544DY-T1-E3 (Lead (Pb)-free)
Si4544DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
- 30
Gate-Source Voltage
VGS
± 20
± 20
± 6.5
± 5.7
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
ID
± 5.4
± 4.0
IDM
± 20
± 20
IS
1.7
PD
Unit
V
A
- 1.7
2.4
1.5
W
TJ, Tstg
- 55 to 150
Symbol
N- or P-Channel
Unit
RthJA
52
°C/W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70768
S09-0868-Rev. D, 18-May-09
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Si4544DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
1.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.0
VDS = 0 V, VGS = ± 20 V
IGSS
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
IDSS
V
N-Ch
± 100
P-Ch
± 100
N-Ch
1
VDS = - 30 V, VGS = 0 V
P-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
P-Ch
-5
VDS ≥ 5 V, VGS = 10 V
N-Ch
20
VDS ≥ - 5 V, VGS = - 10 V
P-Ch
- 20
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
5
VDS ≥ - 5 V, VGS = - 4.5 V
P-Ch
-5
VGS = 10 V, ID = 6.5 A
N-Ch
0.027
0.035
VGS = - 10 V, ID = - 5.7 A
P-Ch
0.036
0.045
VGS = 4.5 V, ID = 5.4 A
N-Ch
0.038
0.050
VGS = - 4.5 V, ID = - 4.0 A
P-Ch
0.060
0.090
VDS = 15 V, ID = 6.5 A
N-Ch
15
VDS = - 15 V, ID = - 5.7 A
P-Ch
9
IS = 1.7 A, VGS = 0 V
N-Ch
0.75
1.2
IS = - 1.7 A, VGS = 0 V
P-Ch
- 0.75
- 1.2
N-Ch
18
35
P-Ch
19
40
N-Ch
4.2
P-Ch
4.5
ID(on)
RDS(on)
gfs
VSD
nA
µA
A
Ω
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
N-Channel
VDS = 15 V, VGS = 10 V, ID = 6.5 A
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 5.7 A
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
td(off)
tf
N-Ch
3.5
P-Ch
3.6
N-Ch
13
P-Ch
13
30
N-Ch
12
30
30
P-Ch
15
30
N-Ch
31
60
P-Ch
37
70
N-Ch
10
30
P-Ch
14
30
IF = 1.7 A, dI/dt = 100 A/µs
N-Ch
30
70
IF = - 1.7 A, dI/dt = 100 A/µs
P-Ch
35
70
P-Channel
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
trr
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70768
S09-0868-Rev. D, 18-May-09
Si4544DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
20
20
VGS = 10 V thru 5 V
4V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
12
8
TC = 125 °C
4
4
25 °C
3V
- 55 °C
0
0
0
2
4
6
8
0
10
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
1500
Ciss
0.05
1200
0.04
VGS = 4.5 V
0.03
VGS = 10 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
VDS - Drain-to-Source Voltage (V)
0.06
0.02
900
600
Coss
300
0.01
Crss
0
0.00
0
4
8
12
16
0
20
6
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.8
10
VDS = 15 V
ID = 6.5 A
8
1.6
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
1
6
4
VGS = 10 V
ID = 6.5 A
1.4
1.2
1.0
0.8
2
0.6
0
0
4
8
12
16
20
0.4
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70768
S09-0868-Rev. D, 18-May-09
150
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Si4544DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
0.12
R DS(on) - On-Resistance (Ω)
20
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.09
ID = 6.5 A
0.06
0.03
0.00
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1
3
5
7
9
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
40
32
0.0
24
Power (W)
VGS(th) Variance (V)
ID = 250 µA
0.3
- 0.3
- 0.6
16
8
- 0.9
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
30
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 52 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 70768
S09-0868-Rev. D, 18-May-09
Si4544DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
20
20
VGS = 10 V thru 5 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
4V
8
4
12
8
TC = 125 °C
4
25 °C
3V
- 55 °C
0
0
0
2
4
6
8
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
1500
0.16
0.12
0.08
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
1200
VGS = 4.5 V
VGS = 10 V
900
600
Coss
0.04
300
Crss
0.00
0
0
4
8
12
16
20
0
12
18
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
30
1.8
VDS = 10 V
ID = 5.7 A
1.6
VGS = 10 V
ID = 5.7 A
8
6
4
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
ID - Drain Current (A)
1.2
1.0
0.8
2
0.6
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70768
S09-0868-Rev. D, 18-May-09
16
20
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4544DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
0.20
RDS(on) - On-Resistance (Ω)
20
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.16
0.12
0.08
ID = 5.7 A
0.04
0.00
1
0
0.25
0.50
0.75
1.00
1.25
VSD - Source-to-Drain Voltage (V)
0
1.50
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.8
40
0.4
30
ID = 250 µA
Power (W)
VGS(th) Variance (V)
0.6
0.2
0.0
20
- 0.2
10
- 0.4
- 0.6
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
TJ - Temperature (°C)
1
10
30
Time (s)
Threshold Voltage
Single Pulse Power
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 52 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70768.
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Document Number: 70768
S09-0868-Rev. D, 18-May-09
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Revision: 01-Jan-2022
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Document Number: 91000