Si4561DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS
(V)
N-Channel
40
P-Channel
- 40
ID (A)a
RDS(on) (Ω)
0.0355 at VGS = 10 V
6.8
0.0425 at VGS = 4.5 V
6.2
0.035 at VGS = - 10 V
- 7.2
0.047 at VGS = - 4.5 V
- 6.2
Qg
(Typ.)
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
5.3
APPLICATIONS
17
• Backlight Inverter for LCD Display
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
Top View
Ordering Information: Si4561DY-T1-E3 (Lead (Pb)-free)
Si4561DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
40
- 40
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
6.8
- 7.2
TC = 70 °C
5.4
- 5.7
ID
TA = 70 °C
IDM
Pulsed Drain Current
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
5.6
b, c
- 5.6b, c
4.4
b, c
- 4.4b, c
20
IS
2.5
- 2.5
1.6b, c
- 1.6b, c
- 20
ISM
20
Single Pulse Avalanche Current
IAS
7
15
EAS
2.45
11.25
L = 0 1 mH
Maximum Power Dissipation
A
- 20
Pulsed Source-Drain Current
Single Pulse Avalanche Energy
V
± 20
TC = 25 °C
TA = 25 °C
mJ
TC = 25 °C
3.0
3.3
TC = 70 °C
1.9
2.10
2.0b, c
2.0b, c
1.25b, c
1.25b, c
TA = 25 °C
PD
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
W
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambientb,
d
Maximum Junction-to-Foot (Drain)
P-Channel
Symbol
Typ.
Max.
Typ.
Max.
t ≤ 10 s
RthJA
54
64
50
62.5
Steady State
RthJF
33
42
31
37
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
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1
Si4561DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
N-Ch
40
VGS = 0 V, ID = - 250 µA
P-Ch
- 40
V
ID = 250 µA
N-Ch
44
ID = - 250 µA
P-Ch
- 41
ID = 250 µA
N-Ch
- 5.5
mV/°C
IID = - 250 µA
P-Ch
VDS = VGS, ID = 250 µA
N-Ch
1.4
3.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.4
- 3.0
VDS = 0 V, VGS = ± 20 V
4.3
N-Ch
100
P-Ch
- 100
VDS = 40 V, VGS = 0 V
N-Ch
1
VDS = - 40 V, VGS = 0 V
P-Ch
-1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
N-Ch
10
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 10
VDS = 5 V, VGS = 10 V
N-Ch
10
VDS = - 5 V, VGS = - 10 V
P-Ch
- 10
VGS = 10 V, ID = 5 A
N-Ch
V
nA
µA
A
0.0295
0.0355
VGS = - 10 V, ID = - 5 A
P-Ch
0.0285
0.035
VGS = 4.5 V, ID = 4 A
N-Ch
0.0355
0.0425
VGS = - 4.5 V, ID = - 4 A
P-Ch
0.037
0.047
VDS = 15 V, ID = 5 A
N-Ch
22
VDS = - 15 V, ID = - 5 A
P-Ch
20
Ω
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Crss
Qg
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
640
P-Ch
1555
N-Ch
73
P-Ch
176
pF
N-Ch
41
P-Ch
142
VDS = 20 V, VGS = 10 V, ID = 5 A
N-Ch
11.7
20
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
P-Ch
38.5
60
N-Ch
5.3
9
N-Channel
VDS = 20 V, VGS = 4.5 V ID = 5 A
P-Ch
17
27
N-Ch
1.9
P-Ch
4.2
N-Ch
1.7
P-Ch
7.0
N-Ch
2.2
P-Ch
3
Qgs
Gate-Drain Charge
Qgd
P-Channel
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
Gate Resistance
Rg
f = 1 MHz
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2
N-Ch
nC
Ω
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
Si4561DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Dynamic
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tr
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
td(off)
tf
td(on)
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
tr
tf
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 16 Ω
IS
TC = 25 °C
td(off)
N-Ch
7
14
P-Ch
11
20
N-Ch
10
20
P-Ch
15
30
N-Ch
15
30
P-Ch
36
60
N-Ch
9
18
P-Ch
9
18
N-Ch
16
30
80
P-Ch
49
N-Ch
17
30
P-Ch
79
120
N-Ch
16
30
P-Ch
35
60
N-Ch
10
20
P-Ch
14
25
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
N-Ch
2.5
P-Ch
- 2.5
N-Ch
20
P-Ch
VSD
- 20
IS = 1.6 A
N-Ch
0.78
1.2
IS = - 1.6 A
P-Ch
- 0.74
- 1.2
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
P-Channel
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
N-Ch
19
30
P-Ch
22
40
N-Ch
14
25
P-Ch
22
35
N-Ch
13
P-Ch
15
N-Ch
6
P-Ch
7
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
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Si4561DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
VGS = 10 thru 5 V
4V
4
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
6
3
TC = 25 °C
2
1
TC = 125 °C
3V
0
0.0
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
800
0.052
640
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.044
VGS = 4.5 V
0.036
VGS = 10 V
480
320
Coss
0.028
160
0.020
0
0
6
12
18
24
30
Crss
0
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
10
ID = 5 A
ID = 5 A
VDS = 10 V
VDS = 30 V
4
2
VGS = 4.5 V
1.2
1.0
0.8
2.5
5.0
7.5
Qg - Total Gate Charge (nC)
Gate Charge
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4
1.4
(Normalized)
VDS = 20 V
6
0
0.0
VGS = 10 V
1.6
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
10.0
12.5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
Si4561DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
100
ID = 5 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.16
0.12
0.08
TA = 125 °C
0.04
TA = 25 °C
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
8
10
On-Resistance vs. Gate-to-Source Voltage
80
0.4
0.2
ID = 250 µA
64
ID = 5 mA
Power (W)
V GS(th) Variance (V)
6
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.0
4
- 0.2
48
32
- 0.4
16
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
www.vishay.com
5
Si4561DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
I D - Drain Current (A)
6
5
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0.0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
Si4561DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
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Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
VGS = 10 thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
3V
6
3
TC = 25 °C
2
1
TC = 125 °C
0
0.0
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
4
Transfer Characteristics
0.050
2500
0.044
2000
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3
VGS - Gate-to-Source Voltage (V)
Output Characteristics
VGS = 4.5 V
0.038
2
0.032
VGS = 10 V
1500
1000
Coss
0.026
500
0.020
0
Crss
0
6
12
18
24
30
0
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
10
ID = 5 A
ID = 5 A
VDS = 10 V
VGS = 10 V
1.6
8
VDS = 20 V
6
VDS = 30 V
4
2
1.4
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
VGS = 4.5 V
1.2
1.0
0.8
0
0
8
16
24
Qg - Total Gate Charge (nC)
Gate Charge
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8
32
40
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
100
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 5 A
TJ = 25 °C
10
0.09
0.06
TA = 125 °C
0.03
TA = 25 °C
0
1
0.0
0.3
0.6
0.9
1.2
1.5
0
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
0.7
80
0.5
ID = 250 µA
0.3
Power (W)
V GS(th) Variance (V)
2
ID = 5 mA
0.1
- 0.1
- 0.3
- 50
60
40
20
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
www.vishay.com
9
Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
I D - Drain Current (A)
6
5
3
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
4.0
1.5
3.2
1.2
2.4
0.9
Power (W)
Power (W)
Current Derating*
1.6
0.6
0.3
0.8
0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69730.
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
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Revision: 01-Jan-2022
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Document Number: 91000