SI4626ADY-T1-GE3

Si4626ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 37 nC APPLICATIONS • Low-Side DC/DC Conversion - Notebook - Gaming SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4626ADY-T1-E3 (Lead (Pb)-free) Si4626ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Avalanche Energy ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 21.5b, c 17.1b, c 70 5.4 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 30 22.6 A 2.7b, c 40 mJ 80 6.0 3.3 PD 3.0b, c 1.9b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 33 16 Maximum 42 21 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 69937 S09-0131-Rev. B, 02-Feb-09 www.vishay.com 1 New Product Si4626ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 37 ID = 250 µA mV/°C - 7.3 VGS(th) VDS = VGS , ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1.2 30 µA A VGS = 10 V, ID = 15 A 0.0026 0.0033 VGS = 4.5 V, ID = 10 A 0.0032 0.0041 VDS = 15 V, ID = 15 A 85 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 5370 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 56 nC 9.8 f = 1 MHz VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.95 1.9 44 70 21 35 70 18 30 td(on) 15 30 10 20 43 70 8 15 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 125 37 45 td(off) Turn-Off Delay Time 82 tf tr Rise Time pF 12.6 VDS = 15 V, VGS = 4.5 V, ID = 10 A td(on) Turn-On Delay Time 690 330 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 5.4 ISM VSD 70 IS = 2.7 A 0.74 1.1 A V Body Diode Reverse Recovery Time trr 38 60 ns Body Diode Reverse Recovery Charge Qrr 36 60 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 20 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69937 S09-0131-Rev. B, 02-Feb-09 New Product Si4626ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 1.5 VGS = 10 thru 4 V 3V 1.2 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 14 0.9 TC = 125 °C 0.6 TC = 25 °C 0.3 TC = - 55 °C 0 0.0 0.0 0.6 1.2 1.8 2.4 3.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0045 5 6600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 5500 0.0040 VGS = 4.5 V 0.0035 0.0030 VGS = 10 V 0.0025 4400 3300 2200 Coss 1100 0.0020 Crss 0 0 14 28 42 56 70 0 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.7 ID = 10 A VGS = 10 V ID = 15 A 8 VDS = 10 V VDS = 15 V 6 VDS = 20 V 4 2 (Normalized) 1.5 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 I D - Drain Current (A) 1.3 VGS = 4.5 V 1.1 0.9 0 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69937 S09-0131-Rev. B, 02-Feb-09 70 80 90 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4626ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 15 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 10 150 °C 1 25 °C 0.1 0.018 0.012 125 °C 0.01 0.006 0.001 0.000 0 0.2 0.4 0.6 0.8 1.0 25 °C 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 200 0.6 0.3 160 0 - 0.3 Power (W) V GS(th) Variance (V) 0.024 ID = 5 mA 120 80 - 0.6 ID = 250 µA 40 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 I D - Drain Current (A) Limited by R DS(on)* 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69937 S09-0131-Rev. B, 02-Feb-09 New Product Si4626ADY Vishay Siliconix 35 7.5 28 6.0 21 4.5 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 14 7 3.0 1.5 0 0.0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 2.0 Power (W) 1.6 1.2 0.8 0.4 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69937 S09-0131-Rev. B, 02-Feb-09 www.vishay.com 5 New Product Si4626ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69937. www.vishay.com 6 Document Number: 69937 S09-0131-Rev. B, 02-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000