Si4632DY
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0027 at VGS = 10 V
36
0.0033 at VGS = 4.5 V
29
VDS (V)
25
Qg (Typ.)
49 nC
• Halogen-free According to IEC 61249-2-21
Definition
• Low Qgd
• 100 % Rg Tested
• UIS and Capacitance Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck - Low Side
- Notebook
- Server
- Workstation
• Synchronous Rectifier - POL
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4632DY-T1-E3 (Lead (Pb)-free)
Si4632DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Limit
25
± 16
40
32
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Unit
V
27b, c
21b, c
70
7.0
A
3.0b, c
30
45
7.8
5.0
mJ
3.5b, c
2.2b, c
- 55 to 150
TJ, Tstg
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t≤5s
Steady
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
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1
Si4632DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
25
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
23
mV/°C
-6
1.2
2.6
V
± 100
nA
VDS = 25 V, VGS = 0 V
1
VDS = 25 V, VGS = 0 V, TJ = 55 °C
10
VDS = ≥ 5 V, VGS = 10 V
30
µA
A
VGS = 10 V, ID = 20 A
0.0022
0.0027
VGS = 4.5 V, ID = 15 A
0.0027
0.0033
VDS = 15 V, ID = 20 A
73
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
tr
7450
11175
495
990
1485
230
460
690
108
161
49
73
VDS = 15 V, VGS = 4.5 V, ID = 20 A
19
f = 1 MHz
1.3
2.0
42
65
115
175
55
85
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
14
23
td(on)
20
30
tr
td(off)
pF
nC
11
td(on)
td(off)
3275
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
69
105
58
90
8
15
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
7
70
IS = 3 A
IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.75
1.1
V
44
70
ns
42
65
nC
22
22
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.2
70
VGS = 10 V thru 4 V
56
ID - Drain Current (A)
I D - Drain Current (A)
0.9
42
3V
28
0.6
25 °C
0.3
14
TC = 125 °C
- 55 °C
0
0.0
0.0
0.5
1.0
1.5
2.0
0
2.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0034
5
8500
6800
0.0030
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
Ciss
VGS = 4.5 V
0.0026
VGS = 10 V
5100
3400
0.0022
1700
0.0018
0
10
20
30
40
50
Coss
Crss
0
60
0
5
ID - Drain Current (A)
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
ID = 20 A
ID = 20 A
8
VDS = 10 V
6
VDS = 15 V
VGS = 20 V
4
VGS = 10 V
1.4
R DS(on) - On-Resistance
(Normalized)
VG S - Gate-to-Source Voltage (V)
10
2
1.2
VGS = 4.5 V
1.0
0.8
0
0
22
44
66
88
110
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
150
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Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.030
R DS(on) - Drain-to-Source On-Resistance ( )
100
IS - Source Current (A)
10
1
150 °C
0.1
25 °C
0.01
0.018
0.012
125 °C
0.006
25 °C
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
6
7
8
9
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
- 0.1
ID = 5 mA
- 0.4
10
120
Power (W)
VGS(th) Variance (V)
0.001
0.00
0.024
80
ID = 250 µA
- 0.7
- 1.0
- 50
40
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
45
40
ID - Drain Current (A)
35
30
Package Limited
25
20
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
10
2.0
8
1.6
Power (W)
Power (W)
Current Derating*
6
4
2
1.2
0.8
0.4
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
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Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 60 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73786.
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Document Number: 73786
S11-0209-Rev. C,14-Feb-11
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Revision: 01-Jan-2022
1
Document Number: 91000