Si4636DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
30
0.0085 at VGS = 10 V
17
0.0105 at VGS = 4.5 V
15.6
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Qg (Typ.)
18.8 nC
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
VSD (V)
IS (A)
0.4 at 2 A
5a
VDS (V)
30
APPLICATIONS
• Notebook Logic DC/DC
- Low Side
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
Schottky Diode
G
Top View
N-Channel MOSFET
Ordering Information: Si4636DY-T1-E3 (Lead (Pb)-free)
Si4636DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
A
5.0
2.3b, c
20
20
4.4
2.8
mJ
W
2.5b, c
1.6b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
V
12.7b, c
10.2b, c
60
IDM
TC = 25 °C
TA = 25 °C
Unit
30
± 16
17.0
13.5
ID
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typ.
Max.
Unit
40
23
50
28
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
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1
Si4636DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID= 250 µA
1.0
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On -State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
0.19
1
VDS = 30 V, VGS = 0 V, TJ = 100 °C
14
100
VGS = 10 V, ID = 10 A
0.0067
0.0085
VGS = 4.5 V, ID = 8 A
0.008
0.0105
VDS = 15 V, ID = 10 A
55
VDS ≥ 5 V, VGS = 10 V
RDS(on)
gfs
30
mA
A
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2635
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
435
138
VDS = 15 V, VGS = 10 V, ID = 10 A
40
60
18.8
30
VDS = 15 V, VGS = 4.5 V, ID = 10 A
7.1
f = 1 MHz
1.3
nC
4.7
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
2.0
32
50
87
135
43
65
tf
19
30
td(on)
12
20
12
20
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
33
50
9
16
Ω
ns
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TC = 25 °C
5.0
60
IS = 2 A
0.36
0.41
A
V
Body Diode Reverse Recovery Time
trr
28
45
ns
Body Diode Reverse Recovery Charge
Qrr
19
30
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
14
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
Si4636DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
60
VGS = 10 V thru 4 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
48
36
24
VGS = 3 V
1.2
0.8
TJ = 125 °C
0.4
12
0
0.0
0.5
1.0
1.5
2.0
25 °C
- 55 °C
0.0
1.0
2.5
1.4
1.8
2.2
2.6
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0100
3200
0.0092
2560
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.0084
VGS = 4.5 V
0.0076
VGS = 10 V
0.0068
1920
1280
640
0.0060
Coss
Crss
0
0
12
24
36
48
60
0
6
18
24
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.7
10
ID = 10 A
ID = 10 A
8
1.5
VDS = 10 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
6
VDS = 15 V
VDS = 20 V
4
2
1.3
1.1
VGS = 4.5 V
0.9
0.7
VGS = 10 V
0
0
9
18
27
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
36
45
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4636DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
100
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 10 A
150 °C
1
25 °C
0.1
0.04
0.03
0.02
125 °C
0.01
25 °C
0.00
0.2
0.4
0.6
0.8
0
1.0
1
2
3
4
5
6
7
8
9
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1
200
0.1
160
10
30 V
20 V
0.01
Power (W)
I R - Reverse (A)
0.01
0.0
0.001
80
40
0.0001
0.00001
0
120
25
50
75
100
125
150
0
0.001
0.01
0.1
T J - Temperature (°C)
Time (s)
Reverse Current (Schottky)
Junction-to-Ambient
1
10
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.1
* VGS
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area
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Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
Si4636DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
I D - Drain Current (A)
16
12
8
4
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
5.5
1.70
4.4
1.36
3.3
1.02
Power (W)
Power (W)
Current Derating*
2.2
1.1
0.68
0.34
0.0
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
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Si4636DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
10-2
4. Surface Mounted
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74961.
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Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
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Revision: 01-Jan-2022
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Document Number: 91000