SI4638DY-T1-E3

New Product Si4638DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 22.4 0.008 at VGS = 4.5 V 20.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 27.5 nC APPLICATIONS SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Notebook System Power • DC/DC Conversion D Schottky Diode G Top View N-Channel MOSFET Ordering Information: Si4638DY-T1-E3 (Lead (Pb)-free) Si4638DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD V A 5.3 2.7b, c 30 45 5.9 3.8 mJ W 3b, c 1.9b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit 16b, c 12.7b, c 70 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 22.4 18 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typ. 33 16 Max. 42 21 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 68745 S09-0764-Rev. B, 04-May-09 www.vishay.com 1 New Product Si4638DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 1 mA 30 VGS(th) VDS = VGS, ID= 1 mA 1.3 IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea 2.7 ± 100 VDS = 30 V, VGS = 0 V 0.063 0.25 VDS = 30 V, VGS = 0 V, TJ = 100 °C 6.4 65 VGS = 10 V, ID = 15 A 0.0054 0.0065 VGS = 4.5 V, ID = 10 A 0.0065 0.008 VDS = 15 V, ID = 15 A 0.74 VDS ≥ 5 V, VGS = 10 V RDS(on) gfs 40 V nA mA A Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 4190 VDS = 15 V, VGS = 0 V, f = 1 MHz 620 VDS = 15 V, VGS = 10 V, ID = 10 A 66.5 100 27.5 42 pF 225 VDS = 15 V, VGS = 4.5 V, ID = 10 A 11.5 nC 7 f = 1 MHz 0.95 1.9 16 30 10 20 39 75 tf 9 18 td(on) 37 75 19 35 td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 0.2 44 85 18 35 Ω ns Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 5.9 70 IS = 2 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.42 0.55 V 32 60 ns 23 45 nC 16 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68745 S09-0764-Rev. B, 04-May-09 New Product Si4638DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 1.2 VGS = 10 V thru 4 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 64 48 32 0.8 0.6 TC = 25 °C 0.4 TC = 125 °C 16 0.2 VGS = 3 V 0 0.0 TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0080 5 5000 0.0074 4000 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.0068 VGS = 10 V 0.0062 3000 2000 0.0056 1000 0.0050 0 0 14 28 42 56 70 Coss Crss 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.7 10 ID = 15 A ID = 10 A 1.5 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 VDS = 10 V 6 VDS = 20 V 4 VDS = 15 V VGS = 10 V 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 14 28 42 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68745 S09-0764-Rev. B, 04-May-09 56 70 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4638DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 100 ID = 15 A I S - Source Current (A) 10 R DS(on) - On-Resistance (Ω) TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.016 0.012 TJ = 125 °C 0.008 TJ = 25 °C 0.004 0 0.001 0 0.2 0.4 0.6 0.8 0 1.0 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-1 10 300 10-2 240 10-3 Power (W) I R - Reverse (A) 30 V 20 V 10-4 10 V 10-5 180 120 60 10-6 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Junction Temperature (°C) 0.1 1 10 Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68745 S09-0764-Rev. B, 04-May-09 New Product Si4638DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 I D - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 7.5 2.0 6.0 1.6 Power (W) Power (W) Current Derating* 4.5 3.0 1.2 0.8 0.4 1.5 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68745 S09-0764-Rev. B, 04-May-09 www.vishay.com 5 New Product Si4638DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68745. www.vishay.com 6 Document Number: 68745 S09-0764-Rev. B, 04-May-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1