New Product
Si4646DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0115 at VGS = 10 V
12e
0.0145 at VGS = 4.5 V
12e
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET® Power
MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
13.7 nC
APPLICATIONS
• Notebook PC
- System Power
• Buck Converter
• Synchronous Rectifier Switch
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
Schottky Diode
G
Top View
S
Ordering Information: Si4646DY-T1-E3 (Lead (Pb)-free)
Si4646DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
30
± 20
12e
12e
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
A
5.6
2.7b, c
20
20
6.25
4.0
mJ
W
3.0b, c
1.9b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
V
12b, c
9.5b, c
50
IDM
Pulsed Drain Current
Unit
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typ.
33
16
Max.
42
20
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
e. Package limited.
Document Number: 68762
S09-0868-Rev. B, 18-May-09
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1
New Product
Si4646DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 1 mA
30
VGS(th)
VDS = VGS, ID= 1 mA
1.2
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On -State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
2.5
± 100
VDS = 30 V, VGS = 0 V
0.035
0.2
VDS = 30 V, VGS = 0 V, TJ = 100 °C
3.5
35
VGS = 10 V, ID = 10 A
0.0092
0.0115
VGS = 4.5 V, ID = 7 A
0.0115
0.0145
VDS = 15 V, ID = 10 A
38
VDS ≥ 5 V, VGS = 10 V
RDS(on)
gfs
20
V
nA
mA
A
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1790
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
td(on)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
0.3
1.2
2.4
23
45
13
25
29
55
24
td(on)
11
22
10
20
22
45
8
16
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
5
12
td(off)
Turn-Off Delay Time
45
21
tf
tr
Rise Time
30
13.7
nC
4
Rg
Gate Resistance
Turn-On Delay Time
pF
310
130
Ω
ns
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
5.6
50
IS = 2 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.53
0.7
V
17
30
ns
5.5
10
nC
8
9
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68762
S09-0868-Rev. B, 18-May-09
New Product
Si4646DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
VGS = 10 V thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
VGS = 3 V
10
3
TC = 25 °C
2
TC = 125 °C
1
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.017
2200
0.015
1760
5
0.013
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.011
VGS = 10 V
880
Coss
0.009
440
0.007
0
0
10
20
30
40
5
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.8
ID = 10 A
ID = 10 A
VDS = 15 V
1.6
VDS = 10 V
6
VDS = 20 V
4
2
VGS = 10 V
1.4
(Normalized)
RDS(on) - On-Resistance
8
0
0.0
Crss
0
50
10
VGS - Gate-to-Source Voltage (V)
1320
VGS = 4.5 V
1.2
1.0
0.8
6.2
12.4
18.6
24.8
31.0
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68762
S09-0868-Rev. B, 18-May-09
150
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3
New Product
Si4646DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
10
0.04
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 10 A
TJ = 25 °C
1
0.1
0.01
0.03
TJ = 125 °C
0.02
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10-1
150
10-2
120
30 V
Power (W)
I R - Reverse Current (A)
4
10-3
20 V
10-4
90
60
10 V
10-5
30
10-6
0
25
50
75
100
125
0
0.001
150
0.01
1
10
Single Pulse Power, Junction-to-Ambient
Reverse Current (Schottky)
100
0.1
Time (s)
T J - Junction Temperature (°C)
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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4
Document Number: 68762
S09-0868-Rev. B, 18-May-09
New Product
Si4646DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
I D - Drain Current (A)
16
Package Limited
12
8
4
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
7.5
1.70
6.0
1.36
4.5
1.02
Power (W)
Power (W)
Current Derating*
3.0
1.5
0.68
0.34
0.0
0.00
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68762
S09-0868-Rev. B, 18-May-09
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5
New Product
Si4646DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68762.
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6
Document Number: 68762
S09-0868-Rev. B, 18-May-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
1
Document Number: 91000
