Si4684DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
30
0.0094 at VGS = 10 V
16
0.0115 at VGS = 4.5 V
14
Qg (Typ.)
14 nC
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd WFET® Technology
for Low Switching Losses
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
• High-Side DC/DC Conversion
- Notebook
- Server
D
G
Top View
S
Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free)
Si4684DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Limit
30
± 12
16
12.9
V
12b, c
9.5b, c
50
4.0
A
2.3b, c
20
20
4.45
2.85
mJ
W
2.50b, c
1.6b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t ≤ 10 s
RthJA
36
50
Steady State
RthJF
22
28
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73324
S09-0767-Rev. C, 04-May-09
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1
Si4684DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS= 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IDSS
On-State Drain Currenta
ID(on)
Forward Transconductancea
0.6
gfs
1.5
1.1
VDS = 0 V, VGS = ± 12 V
± 100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
RDS(on)
mV/°C
4.5
VDS = VGS, ID = 5 mA
IGSS
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
ID = 250 µA
VDS = VGS, ID = 250 µA
V
30
30
V
nA
µA
A
VGS = 10 V, ID = 16 A
0.0078
0.0094
VGS = 4.5 V, ID = 9.5 A
0.0092
0.0115
VDS = 15 V, ID = 16 A
45
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2080
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
340
135
VDS = 15 V, VGS = 10 V, ID = 11 A
VDS = 15 V, VGS = 4.5 V, ID = 11 A
30
45
14
21
3
nC
2.8
f = 1 MHz
td(on)
VDD = 15 V, RL = 1.87 Ω
ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
0.2
0.55
0.9
15
25
60
100
28
45
tf
9
15
td(on)
12
20
VDD = 15 V, RL = 1.87 Ω
ID ≅ 8 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
12
20
45
70
11
18
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
4
50
IS = 2.3 A
IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.70
1.1
V
30
45
ns
26
40
nC
16
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73324
S09-0767-Rev. C, 04-May-09
Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
1.2
VGS = 10 V thru 3 V
1.0
I D – Drain Current (A)
I D - Drain Current (A)
40
30
20
2V
10
0.8
0.6
TC = 125 °C
0.4
0.2
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
0.0
0.0
2.0
1.5
VGS – Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
2500
Ciss
0.011
0.010
C – Capacitance (pF)
2000
VGS = 4.5 V
0.009
VGS = 10 V
0.008
1500
1000
Coss
500
0.007
Crss
0.006
0
0
5
10
15
20
25
30
35
40
0
5
ID – Drain Current (A)
10
15
20
25
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
ID = 11 A
1.6
8
6
VDS = 10 V
VDS = 20 V
4
VDS = 15 V
2
ID = 12 A
VGS = 10 V
1.4
(Normalized)
R DS(on) - On-Resistance
V GS – Gate-to-Source Voltage (V)
1.0
VDS - Drain-to-Source Voltage (V)
0.012
R DS(on) – On-Resistance (m )
0.5
VGS = 4.5 V
1.2
1.0
0.8
0
0
4
8
12
16
20
24
Qg – Total Gate Charge (nC)
Gate Charge
Document Number: 73324
S09-0767-Rev. C, 04-May-09
28
32
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
R DS(on) – Drain-to-Source On-Resistance (Ω)
40
10
I S – Source Current (A)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
ID = 12 A
0.04
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0
1.2
2
VSD – Source-to-Drain Voltage (V)
0.4
200
0.2
160
0.0
120
ID = 5 mA
- 0.4
- 25
0
25
50
75
8
10
80
40
ID = 250 µA
- 0.6
- 50
6
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) Variance (V)
Source-Drain Diode Forward Voltage
- 0.2
4
VGS – Gate-to-Source Voltage (V)
100
125
150
0
0.001
0.01
0.1
1
TJ – Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
1 ms
I D – Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73324
S09-0767-Rev. C, 04-May-09
Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
IC – Peak Avalanche Current (A)
20
ID – Drain Current (A)
16
12
8
Package Limited
4
10
1
TA =
L · ID
BV - V DD
0.1
0
0
25
50
75
100
TC – Case Temperature (°C)
Current Derating*
125
150
0.00001
0.0001
0.001
0.01
0.1
1
TA – Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73324
S09-0767-Rev. C, 04-May-09
www.vishay.com
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Si4684DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73324.
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Document Number: 73324
S09-0767-Rev. C, 04-May-09
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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