SI4804CDY-T1-GE3

New Product Si4804CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 VDS (V) 30 • • • • Qg (Typ.) 7 Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • DC/DC • Notebook System Power SO-8 D2 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si4804CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 8.0 7.1 ID 7.1b, c 5.5b, c 30 2.4 IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Limit 30 ± 20 IS A 1.8b, c 30 10 5 3.1 2 2b, c 1.28b, c - 55 to 150 ISM IAS EAS PD TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS Parameter b, d t ≤ 10 s Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W. Document Number: 68924 S-82485-Rev. A, 13-Oct-08 Symbol RthJA RthJF Typical 49 32 Maximum 62.5 40 Unit °C/W www.vishay.com 1 New Product Si4804CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ V 31 ID = 250 µA mV/°C - 5.1 VGS(th) VDS = VGS , ID = 250 µA 2.4 V Gate Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs VDS = 5 V, VGS = 10 V 1.2 20 µA A VGS = 10 V, ID = 7.5 A 0.018 0.022 VGS = 4.5 V, ID = 6.5 A 0.022 0.027 VDS = 15 V, ID = 7.5 A 20 Ω S Dynamica Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 865 N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz 66 VDS = 15 V, VGS = 10 V, ID = 7.5 A N-Channel VDS = 15 V, VGS = 4.5 V, ID = 7.5 A f = 1 MHz td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 10.5 2.3 0.4 1.9 3.8 9 18 12 24 34 18 td(on) 17 34 13 26 19 35 9 18 N-Channel VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω nC 2.2 9 tf Fall Time 23 7 17 td(off) Turn-Off Delay Time N-Channel VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 15.4 tf tr Rise Time pF 131 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.4 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 30 IS = 1.8 A N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 0.77 1.1 A V 16 32 ns 8 16 nC 10 6 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68924 S-82485-Rev. A, 13-Oct-08 New Product Si4804CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 TC = - 55 °C VGS = 10 thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 24 18 12 VGS = 3 V 6 3 TC = 125 °C 2 1 TC = 25 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 24 30 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.026 1100 0.024 880 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.022 0.020 VGS = 10 V 660 440 Coss 0.018 220 0.016 0 0 6 12 18 24 Crss 0 30 6 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 7.5 A ID = 7.5 A 1.6 8 VGS = 10 V 6 VDS = 10 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 VDS = 15 V 4 VDS = 20 V 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0.0 3.2 6.4 9.6 12.8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68924 S-82485-Rev. A, 13-Oct-08 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4804CDY Vishay Siliconix 100 0.10 10 0.08 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 25 °C 1 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.2 40 0.0 Power (W) V GS(th) Variance (V) 3 ID = 5 mA - 0.2 ID = 250 µA - 0.4 30 20 10 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68924 S-82485-Rev. A, 13-Oct-08 New Product Si4804CDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 Power (W) Power (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68924 S-82485-Rev. A, 13-Oct-08 www.vishay.com 5 New Product Si4804CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C 3. TJM -- TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 4. Surface Mounted 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68924. www.vishay.com 6 Document Number: 68924 S-82485-Rev. A, 13-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1