SI4830CDY-T1-E3

Si4830CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 8.0 8.0 8.0 7.3 7.3 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS VDS (V) VSD (V) Diode Forward Voltage IF (A)a 30 0.51 V at 1.0 A 2.0 • Notebook Logic dc-to-dc • Low Current dc-to-dc D1 D2 SO-8 S1/D2 1 8 D1 G1 2 7 D1 S2 3 6 S1/D2 G2 4 5 S1/D2 Schottky Diode G1 G2 Top View Ordering Information: Si4830CDY-T1-E3 (Lead (Pb)-free) Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ID TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS ISM IAS EAS PD Channel-1 30 ± 20 Channel-2 30 ± 20 8.0e 7.1 8.0e 7.1 7.5b, c 5.8b, c 30 2.6 7.5b, c 5.8b, c 30 2.6 1.8b, c 30 10 5 2.9 1.8 1.8b, c 30 10 5 2.9 1.8 2b, c 1.2b, c 2b, c 1.2b, c TJ, Tstg Unit V A mJ W - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJF Channel-1 Typ. Max. 52 62.5 t ≤ 10 s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State 35 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2). e. Package limited. Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 43 Channel-2 Typ. Max. 52 62.5 35 43 Unit °C/W www.vishay.com 1 Si4830CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VGS = 0 V, ID = 1 mA Ch-1 30 VGS = 0 V, ID = 1 mA Ch-2 30 ΔVDS/TJ ID = 250 µA Ch-1 32 ΔVGS(th)/TJ ID = 250 µA Ch-1 -6 VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs V mV/°C VDS = VGS, ID = 1 mA Ch-1 1 3 VDS = VGS, ID = 1 mA Ch-2 1 3 VDS = 0 V, VGS = ± 20 V Ch-1 100 VDS = 0 V, VGS = ± 20 V Ch-2 100 VDS = 30 V, VGS = 0 V Ch-1 0.001 VDS = 30 V, VGS = 0 V Ch-2 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-1 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-2 0.016 0.10 0.025 1.1 V nA mA 10 VDS = 5 V, VGS = 10 V Ch-1 20 VDS = 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 8 A Ch-1 0.0156 VGS = 10 V, ID = 8 A Ch-2 0.0156 0.020 VGS = 4.5 V, ID = 5 A Ch-1 0.019 0.025 VGS = 4.5 V, ID = 5 A Ch-2 0.019 0.025 VDS = 15 V, ID = 8 A Ch-1 29 VDS = 15 V, ID = 8 A Ch-2 29 Ch-1 950 Ch-2 950 Ch-1 155 Ch-2 185 Ch-1 65 A 0.020 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 65 VDS = 15 V, VGS = 10 V, ID = 8 A Ch-1 16.5 VDS = 15 V, VGS = 10 V, ID = 8 A Ch-2 16.5 25 Ch-1 7.3 11 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 7.3 11 Ch-1 2.7 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-2 2.7 Ch-1 2.1 Qgs Qgd Rg pF Ch-2 f = 1 MHz 25 nC 2.1 Ch-1 0.2 1.2 2.4 Ch-2 0.2 1.2 2.4 Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 Si4830CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Max. Ch-1 9 18 Ch-2 10 20 Ch-1 11 20 Ch-2 10 20 Ch-1 18 35 Ch-2 18 35 Ch-1 8 16 Test Conditions Min. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 9 18 Ch-1 17 35 Ch-2 17 35 Ch-1 12 24 Ch-2 12 24 Ch-1 18 35 Ch-2 19 35 Ch-1 10 20 Ch-2 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM VSD Ch-1 2.6 Ch-2 2.6 Ch-1 30 Ch-2 IS = 1 A 30 Ch-1 0.74 1.1 Ch-2 0.46 0.51 Ch-1 17 34 Ch-2 17 34 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 9 18 Ch-2 7 14 Reverse Recovery Fall Time ta Channel-2 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 10 Ch-2 9 Ch-1 7 Ch-2 8 Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 3 Si4830CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 VGS = 3 V 6 18 12 TC = 25 °C 6 TC = 125 °C TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 Transfer Characteristics 0.022 960 VGS = 4.5 V 0.020 0.018 Ciss 480 Coss VGS = 10 V 240 0.014 0 6 12 18 24 30 Crss 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 ID = 8 A ID = 8 A 1.6 8 VDS = 10 V 6 VDS = 15 V VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 720 0.016 1.2 VGS = 4.5 V 1.0 0.8 3.6 7.2 10.8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 4 Output Characteristics 1200 0 0.0 3 VGS - Gate-to-Source Voltage (V) 0.024 0 2 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 14.4 18.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 Si4830CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 10 0.08 TJ = 150 °C R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 8 A TJ = 25 °C 1 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 10 60 0.2 48 0.0 - 0.2 ID = 5 mA Power (W) VGS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) 36 24 - 0.4 ID = 250 µA 12 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 1s 10 s DC 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 5 Si4830CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 Power (W) Power (W) Current Derating* 2.1 1.4 0.7 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 Si4830CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 7 Si4830CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 VGS = 3 V 6 3 2 TC = 25 °C 1 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 0.022 960 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1200 VGS = 4.5 V 0.018 Ciss 480 Coss VGS = 10 V 240 0.014 0 12 18 24 30 Crss 0 15 20 25 On-Resistance vs. Drain Current Capacitance 30 1.8 ID = 8 A 1.6 8 VDS = 10 V 6 VDS = 15 V VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) ID = 8 A 1.2 VGS = 4.5 V 1.0 0.8 3.6 7.2 10.8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 5 ID - Drain Current (A) 10 0 0.0 5 720 0.016 6 4 Transfer Characteristics 0.024 0 3 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.020 2 14.4 18.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 Si4830CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 10 0.08 R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 8 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-2 10 60 48 10-3 20 V 10-4 Power (W) IR - Reverse Current (A) 30 V 10 V 36 24 10-5 12 10-6 0 25 50 75 100 125 0 0.001 150 0.01 T J - Junction Temperature (°C) 0.1 1 10 Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 1s 10 s DC 100 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 9 Si4830CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 Power (W) Power (W) Current Derating* 2.1 1.4 0.7 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 Si4830CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68884. Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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