SI4831DY-T1-E3

Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode      VDS (V) –30 rDS(on) (
) ID (A) 0.045 @ VGS = –10 V
5 0.090 @ VGS = –4.5 V
3.5       VKA (V) Vf (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 3 S K D A SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D G Top View P-Channel MOSFET            Symbol Limit Drain-Source Voltage (MOSFET) Parameter VDS –30 Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS
20 Continuous Drain Current (TJ = 150C) 150 C) (MOSFET)a, b TA = 25C TA = 70C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range ID
5 IDM
20 IS –1.7 IF 3 IFM 20 2 TA = 70C 1.28 PD TA = 70C V
3.9 TA = 25C TA = 25C Unit 1.83 A W 1.17 TJ, Tstg –55 to 150 C Notes a. Surface Mounted on FR4 Board. b. t  10 sec. Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com
FaxBack 408-970-5600 2-1 Si4831DY New Product Vishay Siliconix      Parameter Device Symbol Typical Maximum 52 62.5 MOSFET Maximum Junction-to-Ambient (t v 10 sec)a Schottky RthJA MOSFET Maximum Junction-to-Ambient (t = steady state)a Schottky MOSFET Maximum Junction-to-Foot RthJF Schottky 56 68 82 100 91 110 27 33 32 40 Unit C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec.              Parameter Symbol Test Condition Min VDS = VGS, ID = –250 mA –1.0 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State On State Resistancea Drain-Source Forward Transconductancea Diode Forward Voltagea V VDS = 0 V, VGS = "20 V "100 VDS = –24 V, VGS = 0 V –1 VDS = –24 V, VGS = 0 V, TJ = 75C –10 VDS w –5 V, VGS = –10 V –20 mA A VGS = –10 V, ID = –5 A 0.036 0.045 VGS = –4.5 V, ID = –3.5 A 0.060 0.090 gfs VDS = –15 V, ID = –5 A 9 VSD IS = –1.7 A, VGS = 0 V –0.75 –1.2 10 20 VDS = –15 15 V V, VGS = –5 5V V, ID = –5 5A 4.5 rDS(on) DS( ) nA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC C 3.6 VDD = –15 V,, RL = 15 W 15 V ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –1.7 A, di/dt = 100 A/ms 13 25 15 30 37 70 14 30 35 70 Typ Max ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.              Parameter Forward Voltage Drop M i Maximum R Reverse Leakage L k Current C Junction Capacitance www.vishay.com
FaxBack 408-970-5600 2-2 Symbol VF Irm CT Test Condition Min IF = 3 A 0.485 0.53 IF = 3 A, TJ = 125C 0.42 0.47 Vr = 30 V 0.008 0.1 Vr = 30 V, TJ = 75C 0.4 5 Vr = 30 V, TJ = 125C 6.5 20 Vr = 15 V 102 Unit V mA A pF Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Si4831DY New Product Vishay Siliconix           Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 5 V 16 I D – Drain Current (A) I D – Drain Current (A) 16 12 4V 8 4 3V 12 8 TC = 125C 4 25C –55C 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1500 0.16 0.12 C – Capacitance (pF) r DS(on)– On-Resistance (
) Ciss 1200 VGS = 4.5 V 0.08 VGS = 10 V 0.04 900 600 Coss 300 0 Crss 0 0 4 8 12 16 0 20 6 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 10 V ID = 5.7 A 1.6 8 r DS(on)– On-Resistance (
) (Normalized) V GS – Gate-to-Source Voltage (V) 12 6 4 2 0 0 4 8 12 Qg – Total Gate Charge (nC) Document Number: 71061 S-61859—Rev. A, 10-Oct-99 16 20 VGS = 10 V ID = 5.7 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com
FaxBack 408-970-5600 2-3 Si4831DY New Product Vishay Siliconix           Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 20 10 TJ = 150C TJ = 25C 0.16 0.12 0.08 ID = 5.7 A 0.04 0 1 0.00 0.25 0.50 0.75 1.00 1.25 0 1.50 2 VSD – Source-to-Drain Voltage (V) 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 40 0.8 0.6 32 ID = 250 mA 0.4 24 Power (W) V GS(th) Variance (V) 4 0.2 –0.0 16 –0.2 8 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 TJ – Temperature (C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com
FaxBack 408-970-5600 2-4 Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Si4831DY New Product Vishay Siliconix           Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10           Reverse Current vs. Junction Temperature Forward Voltage Drop 40 5 1 0.1 30 V I F – Forward Current (A) I R – Reverse Current (mA) 10 10 V 0.01 TJ = 150C 1 TJ = 25C 0.001 0.0001 0.1 0 25 50 75 100 125 150 0 TJ – Junction Temperature (C) 0.4 0.6 0.8 Capacitance 500 CT – Junction Capacitance (pF) 0.2 VF – Forward Voltage Drop (V) 400 300 200 100 0 0 6 12 18 24 30 VKA – Reverse Voltage (V Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com
FaxBack 408-970-5600 2-5 Si4831DY New Product Vishay Siliconix            Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com
FaxBack 408-970-5600 2-6 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1