Si4840BDY
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
SO-8 Single
D
8
D
7
D
6
D
5
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
1
S
2
S
3
S
APPLICATIONS
4
G
D
• Synchronous rectification
• POL, IBC
- Secondary side
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
Available
40
0.009
0.012
15
19 d
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
SO-8
Si4840BDY-T1-E3
Si4840BDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current
Avalanche current
Avalanche energy
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous source-drain diode current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
LIMIT
40
± 20
19
15
12.4 a, b
9.9 a, b
50
15
11
5
2.1 a, b
6
3.8
2.5 a, b
1.6 a, b
-55 to +150
UNIT
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, c
Maximum junction-to-foot (drain)
t 10 s
Steady state
SYMBOL
RthJA
RthJF
TYPICAL
37
17
MAXIMUM
50
21
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 85 °C/W
d. Based on TC = 25 °C
S17-1827-Rev. D, 11-Dec-17
Document Number: 69795
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4840BDY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
40
-
-
-
V
40
-
-
-6
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
1
-
3
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
5
VDS 5 V, VGS = 10 V
50
-
-
A
VGS = 10 V, ID = 12.4 A
-
0.0074
0.0090
VGS = 4.5 V, ID = 10.8 A
-
0.0095
0.0120
VDS = 15 V, ID = 12.4 A
-
56
-
-
2000
-
-
260
-
-
150
-
-
33
50
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 12.4 A
-
15
23
VDS = 20 V, VGS = 4.5 V, ID = 12.4 A
-
6.7
-
-
5.1
-
f = 1 MHz
-
1.4
2.1
-
25
40
td(on)
tr
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
-
12
20
-
25
40
tf
-
10
15
td(on)
-
10
15
td(off)
tr
td(off)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
tf
-
15
25
-
30
45
-
10
15
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
TC = 25 °C
IS = 10 A, VGS = 0 V
-
-
30
-
-
50
-
0.8
1.2
A
V
Body diode reverse recovery time
trr
-
30
60
ns
Body diode reverse recovery charge
Qrr
-
26
52
nC
Reverse recovery fall time
ta
-
17.5
-
Reverse recovery rise time
tb
-
12.5
-
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1827-Rev. D, 11-Dec-17
Document Number: 69795
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4840BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
3V
10
6
TC = 25 °C
4
TC = 125 °C
2
2V
0
TC = -55 °C
0
0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
2400
0.012
Ciss
0.010
VGS = 4.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2000
0.008
VGS = 10 V
1600
1200
800
0.006
Coss
400
0.004
Crss
0
0
10
20
30
ID - Drain Current (A)
40
50
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
35
40
125
150
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.8
R DS(on) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
3.5
VDS = 20 V
ID = 12.4 A
8
6
4
2
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
S17-1827-Rev. D, 11-Dec-17
30
35
1.6
VGS = 10 V
ID = 12.4 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69795
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4840BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
0.030
ID = 12.4 A
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
TJ = 150 °C
10
TJ = 25 °C
0.020
125 °C
0.015
0.010
25 °C
0.005
0.000
1
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
50
ID = 250 µA
2.2
40
Power (W)
V GS(th) (V)
2.0
1.8
1.6
30
20
1.4
10
1.2
1.0
-50
-25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
600
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on) (1)
100 µs
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
1s
10 s
0.1
TA = 25 °C
Single pulse
0.01
0.1
(1)
BVDSS
limited
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S17-1827-Rev. D, 11-Dec-17
Document Number: 69795
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4840BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
6
5
Power Dissipation (W)
I D - Drain Current (A)
20
15
10
5
4
3
2
1
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating a
125
150
25
50
75
100
125
TC - Case Temperature (°C)
150
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1827-Rev. D, 11-Dec-17
Document Number: 69795
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4840BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty cycle, D =
0.02
t1
t2
2. Per unit base = RthJA = 68 °C/W
3. T JM - TA = PDMZthJA(t)
Single pulse
4. Surface mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69795.
S17-1827-Rev. D, 11-Dec-17
Document Number: 69795
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000