Si4842BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0042 at VGS = 10 V
28
0.0057 at VGS = 4.5 V
24
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
Qg (Typ.)
29 nC
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4842BDY-T1-E3 (Lead (Pb)-free)
Si4842BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Symbol
Limit
VDS
VGS
30
± 20
28
23
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
Operating Junction and Storage Temperature Range
Unit
V
20b, c
16b, c
60
5.6
A
2.7b, c
35
61
6.25
4.0
mJ
W
3.0b, c
1.9b, c
- 55 to 150
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, d
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
32
15
Maximum
42
20
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
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1
Si4842BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 1 mA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
30
mV/°C
- 6.4
1.4
3
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
µA
Α
30
VGS = 10 V, ID = 20 A
0.0034
0.0042
VGS = 4.5 V, ID = 15 A
0.0047
0.0057
VDS = 15 V, ID = 20 A
90
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
3650
VDS = 15 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
Turn-on Delay Time
Rise Time
43
12.6
VDS = 15 V, VGS = 4.5 V, ID = 25 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
2
125
190
190
280
60
td(on)
15
25
tr
15
25
42
65
8
15
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
nC
9.4
1.25
20
tf
Fall Time
100
29
13
td(off)
Turn-Off Delay Time
68
38
tf
Fall Time
pF
300
VDS = 15 V, VGS = 10 V, ID = 25 A
td(on)
Turn-on Delay Time
635
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
5.6
ISM
VSD
60
IS = 2.7 A
0.74
1.1
A
V
Body Diode Reverse Recovery Time
trr
34
55
ns
Body Diode Reverse Recovery Charge
Qrr
31
50
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
18
16
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.2
VGS = 10 V thru 4 V
1.0
ID - Drain Current (A)
ID - Drain Current (A)
50
40
30
20
10
0.8
0.6
0.4
25 °C
0.2
TC = 125 °C
3V
- 55 °C
0
0.0
0.0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
4500
0.006
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
Ciss
3600
0.005
VGS = 4.5 V
0.004
1800
Coss
VGS = 10 V
900
0.003
Crss
0
0
10
20
30
40
50
60
0
6
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.6
10
ID = 20 A
ID = 25 A
1.4
8
R DS(on) - On-Resistance
(Normalized)
VG S - Gate-to-Source Voltage (V)
2700
VDS = 10 V
6
VDS = 15 V
4
VDS = 20 V
VGS = 4.5 V
1.2
VGS = 10 V
1.0
0.8
2
0
0
14
28
42
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
56
70
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
TJ = 150 °C
10.000
IS - Source Current (A)
R DS(on) - Drain-to-Source On-Resistance (Ω)
100.000
1.000
0.100
TJ = 25 °C
0.010
0.001
0.024
0.018
0.012
TJ = 125 °C
0.006
TJ = 25 °C
0.000
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
200
0.2
160
- 0.1
120
Power (W)
VGS(th) (V)
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
0.5
ID = 5 mA
ID = 250 µA
- 0.7
- 1.0
- 50
3
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
- 0.4
2
80
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.1
* VGS
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
ID - Drain Current (A)
28
21
14
7
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
8.0
2.0
6.4
1.6
4.8
1.2
Power (W)
Power (W)
Current Derating*
3.2
1.6
0.8
0.4
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
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Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73532.
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6
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Revision: 01-Jan-2022
1
Document Number: 91000