SI4845DY-T1-E3

Si4845DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.210 at VGS = - 4.5 V - 2.7 0.345 at VGS = - 2.5 V - 2.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Integrated Schottky • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 2.9 APPLICATIONS SCHOTTKY PRODUCT SUMMARY • Asynchronous dc-to-dc Buck VKA (V) VF (V) Diode Forward Voltage IF (A) 20 0.50 V at 1.0 A 2.4 S K D A SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D G Top View Ordering Information: Si4845DY-T1-E3 (Lead (Pb)-free) Si4845DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IS IFM Operating Junction and Storage Temperature Range V A - 1.9b, c 1b -7 2.75 1.75 IF TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Unit - 2.1b, c - 1.7b, c -7 - 2.4 IDM TC = 25 °C TA = 25 °C Average Forward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (Schottky) Limit - 20 - 20 ± 12 - 2.7 - 2.1 PD 1.75b, c 1.1b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET and Schottky) Maximum Junction-to-Foot (Drain) (MOSFET and Schottky) Symbol RthJA RthJF Typ. 60 35 Max. 71.5 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. Document Number: 73415 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 1 Si4845DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 25 mV/°C 2.6 - 0.5 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 75 °C - 10 VDS ≥ - 5 V, VGS = - 4.5 V -5 µA A VGS = - 4.5 V, ID = - 2 A 0.175 0.210 VGS = - 2.5 V, ID = - 1.0 A 0.285 0.345 VDS = - 15 V, ID = - 2 A 3.5 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Rg 63 pF 33 2.9 VDS = - 10 V, VGS = - 4.5 V, ID = - 4 A 4.5 0.72 nC 0.65 f = 1 MHz Ω 5.5 td(on) 8 VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω 13 40 60 17 26 tf 11 18 td(on) 3 6 tr td(off) tr td(off) VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode IS Current Pulse Diode Forward Current ISM Body Diode Voltage 312 VDS = - 10 V, VGS = 0 V, f = 1 MHz VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 10 16 12 20 8 15 TC = 25 °C - 2.7 ns A -7 IS = - 1.9 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C - 0.85 - 1.2 V 24 40 ns 14 20 nC 14 ns 10 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions Typ. Max. IF = 1 A Min. 0.45 0.50 IF = 1 A, TJ = 125 °C 0.36 0.42 0.1 VR = 30 V 0.04 VR = 30 V, TJ = 75 °C 0.1 2 VR = 30 V, TJ = 125 °C 2 10 VR = 10 V 62 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73415 S09-2109-Rev. C, 12-Oct-09 Si4845DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted VGS = 5 V VGS = 4.5 V 10 1.2 VGS = 4 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 8 VGS = 3.5 V 6 VGS = 3 V 4 VGS = 2.5 V 2 VGS = 2 V 0.8 0.6 0.4 TC = 125 °C 0.2 25 °C - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.00 3.0 0.25 VDS - Drain-to-Source Voltage (V) 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 450 0.5 Ciss 350 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (mΩ) 400 0.4 0.3 VGS = 4.5 V 0.2 300 250 200 150 Coss 100 0.1 50 Crss 0 0.0 0 1 2 3 4 5 0 6 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 10 ID = 4 A 1.4 8 VDS = 5 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 6 VDS = 10 V VDS = 15 V 4 1.2 VGS = 2.5 V 1.0 0.8 2 0 0.0 VGS = 4.5 V 1.3 2.6 3.9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73415 S09-2109-Rev. C, 12-Oct-09 5.2 6.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4845DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 RDS(on) - Drain-to-Source On-Resistance ( ) 10 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.8 TA = 150 °C 0.6 0.4 TA = 25 °C 0.2 0.0 0.01 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.3 40 ID = 250 µA Power (W) VGS(th) (V) 0.2 ID = 5 mA 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 10 Limited by RDS(on)* ID - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse DC 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73415 S09-2109-Rev. C, 12-Oct-09 Si4845DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 3.0 ID - Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 3.5 1.25 3.0 Power Dissipation (W) Power Dissipation (W) 1.00 2.5 2.0 1.5 1.0 0.75 0.50 0.25 0.5 0.0 0.00 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73415 S09-2109-Rev. C, 12-Oct-09 www.vishay.com 5 Si4845DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 6 Document Number: 73415 S09-2109-Rev. C, 12-Oct-09 Si4845DY Vishay Siliconix 20 10 3 1 1 0.1 I F - Forward Current (A) IR - Reverse Current (mA) SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 V 10 V 0.01 TJ = 150 C TJ = 25 C 0.1 0.001 0.0001 0.01 0 25 50 75 100 125 150 0 0.1 TJ - Junction Temperature (°C) 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) Forward Voltage Drop Reverse Current vs. Junction Temperature C T - Junction Capacitance (pF) 250 200 150 Ciss 100 50 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73415. Document Number: 73415 S09-2109-Rev. 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