SI4848ADY-T1-GE3

Si4848ADY www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • ThunderFET® power MOSFET • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S APPLICATIONS 4 G • Boost converters • LED backlighting Marking code: 4848A • Load switch 150 RDS(on) max. () at VGS = 10 V 0.084 RDS(on) max. () at VGS = 4.5 V 0.133 Qg typ. (nC) ID (A) d Configuration G • PD switch PRODUCT SUMMARY VDS (V) D • DC/DC converters S N-Channel MOSFET 4.4 5.5 Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4848ADY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 150 ± 20 5.5 4.4 3.9 a, b 3.1 a, b 20 4.2 2.1 a, b 10 5 5 3.2 2.5 a, b 1.6 a, b -55 to +150 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c t  10 s Maximum junction-to-foot (drain) Steady state Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 92 °C/W d. TC = 25 °C S17-0570-Rev. A, 17-Apr-17 SYMBOL RthJA RthJF TYPICAL 43 19 MAXIMUM 50 25 UNIT °C/W Document Number: 77716 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848ADY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 150 - - V - 149 - - -7.1 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 150 V, VGS = 0 V - - 1 VDS = 150 V, VGS = 0 V, TJ = 70 °C - - 10 VDS  10 V, VGS = 10 V 10 - - A VGS = 10 V, ID = 3.9 A - 0.070 0.084 VGS = 6 V, ID = 3.1 A - 0.102 0.133  VDS = 10 V, ID = 3.9 A - 5 - - 335 - - 70 - - 3 - - 6.5 9.5 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 10 V, ID = 3.9 A - 4.4 6.6 VDS = 75 V, VGS = 6 V, ID = 3.9 A - 1.5 - - 1.9 - f = 1 MHz 0.2 1.1 2.2 - 8 16 - 22 35 - 12 24 tf - 22 35 td(on) - 10 20 - 22 40 - 10 20 - 20 40 td(on) tr td(off) tr td(off) VDD = 75 V, RL = 24.2 , ID  3.1 A, VGEN = 10 V, Rg = 1  VDD = 75 V, RL = 24.2 , ID  3.1 A, VGEN = 7.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = 3.1 A, VGS = 0 V - - 2.1 - - 20 - 0.85 1.2 A V Body diode reverse recovery time trr - 57 86 ns Body diode reverse recovery charge Qrr - 110 165 nC Reverse recovery fall time ta - 43 - Reverse recovery rise time tb - 14 - IF = 3.1 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0570-Rev. A, 17-Apr-17 Document Number: 77716 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848ADY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 25 10000 20 10000 VGS = 6 V 10 100 5 VGS = 5 V TC = 125 °C 1000 15 1st line 2nd line 1000 2nd line ID - Drain Current (A) 20 15 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 7 V 10 TC = 25 °C 100 5 TC = -55 °C 0 0 10 0.5 1 1.5 10 0 2 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.1 VGS = 10 V 100 0.05 600 1000 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.15 VGS = 6 V 10000 800 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 8 VDS - Drain-to-Source Voltage (V) 2nd line 0.2 400 Ciss Coss 0 10 0 5 10 15 20 10 0 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 2.1 VDS = 75 V 8 1000 1st line 2nd line VDS = 38 V VDS = 120 V 4 100 2 0 10 0 2 4 6 8 2nd line RDS(on) - On-Resistance (Normalized) 10000 6 100 Axis Title 10 ID = 3.9 A 100 200 Crss 0 2nd line VGS - Gate-to-Source Voltage (V) 6 VGS = 10 V, ID = 3.9 A 1.8 1000 1.5 VGS = 6 V, ID = 3.1 A 1.2 100 0.9 0.6 0.3 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0570-Rev. A, 17-Apr-17 10000 1st line 2nd line 0 Document Number: 77716 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848ADY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 2nd line RDS(on) - On-Resistance (Ω) 1000 1st line 2nd line 2nd line IS - Source Current (A) 10 1 TJ = 150 °C TJ = 25 °C 0.1 100 0.01 0.001 0.2 0.4 0.6 0.8 1.0 TJ = 150 °C 0.15 1000 0.1 TJ = 25 °C 100 0.05 0 10 0 10000 0.2 1st line 2nd line 100 10 1.2 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 30 10000 3.8 24 Power (W) 1000 1st line 2nd line 2nd line VGS(th) (V) ID = 250 μA 3.4 3.0 18 12 100 2.6 6 2.2 0 -2 10 10 -50 -25 0 25 50 75 100 125 150 10 -1 1 10 100 1000 TJ - Temperature (°C) 2nd line Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 IDM limited 100 μs 1000 1 1st line 2nd line 2nd line ID - Drain Current (A) Limited10 by RDS(on) (1) 1 ms 10 ms 0.1 100 ms 100 10s, 1s 0.01 TA = 25 °C Single pulse BVDSS limited 0.001 0.1 (1) 1 10 100 DC 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0570-Rev. A, 17-Apr-17 Document Number: 77716 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848ADY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 4.5 1000 1st line 2nd line 2nd line ID - Drain Current (A) 6 3 100 1.5 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 6 10000 10000 1.8 1.5 4.5 100 1st line 2nd line 2nd line Power (W) 3 1000 1.2 1st line 2nd line 2nd line Power (W) 1000 0.9 100 0.6 1.5 0.3 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-0570-Rev. A, 17-Apr-17 Document Number: 77716 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848ADY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 Notes: 0.2 0.1 P DM 0.1 t1 t2 1. Duty cycle, D = 0.05 0.02 2. Per unit base = R thJA = 71 °C/W 3. T JM - TA = PDMZthJA(t) Single pulse 0.01 10-4 t1 t2 4. Surface mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77716. S17-0570-Rev. A, 17-Apr-17 Document Number: 77716 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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