SI4848BDY-T1-GE3

Si4848BDY www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 • TrenchFET® Gen V power MOSFET D 5 • 100 % Rg tested • Material categorization for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S APPLICATIONS 4 G D • DC/DC converters • Boost converters • LED backlighting G • PD switch Marking code: 4848A • Load switch PRODUCT SUMMARY 150 S RDS(on) max. (Ω) at VGS = 10 V 0.089 N-Channel MOSFET RDS(on) max. (Ω) at VGS = 6 V 0.110 VDS (V) Qg typ. (nC) 3.7 ID (A) d Configuration 5 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SO-8 Si4848BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 150 ± 20 5 4 3.7 a, b 3.0 a, b 15 3.8 2.1 a, b 4 0.8 4.5 2.9 2.5 a, b 1.6 a, b -55 to +150 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER t ≤ 10 s Maximum junction-to-ambient a, c Maximum junction-to-foot (drain) Steady state Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 85 °C/W d. TC = 25 °C S22-0979-Rev. A, 28-Nov-2022 SYMBOL RthJA RthJF TYPICAL 43 22 MAXIMUM 50 28 UNIT °C/W Document Number: 62127 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848BDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 150 - - V - 92 - - -5.2 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 150 V, VGS = 0 V - - 1 VDS = 150 V, VGS = 0 V, TJ = 70 °C - - 10 VDS ≤ 10 V, VGS = 10 V 10 - - VGS = 10 V, ID = 3.7 A - 0.0742 0.089 VGS = 6 V, ID = 3.0 A - 0.084 0.110 VDS = 10 V, ID = 3.7 A - 5 - - 400 - - 41 - - 3 - - 6 9 μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 10 V, ID = 3.7 A - 3.7 5.6 VDS = 75 V, VGS = 6 V, ID = 3.7 A - 2.2 - - 0.8 - f = 1 MHz 0.5 2.5 5 - 8 16 - 6 12 - 12 24 tf - 35 53 td(on) - 10 20 - 8 16 - 15 30 - 32 48 td(on) tr td(off) tr td(off) VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω VDD = 75 V, RL = 25 Ω, ID ≅ 3 A, VGEN = 6 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = 3 A, VGS = 0 V - - 2.1 - - 15 - 0.85 1.2 A V Body diode reverse recovery time trr - 238 357 ns Body diode reverse recovery charge Qrr - 1895 2843 nC Reverse recovery fall time ta - 148 - Reverse recovery rise time tb - 90 - IF = 3 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0979-Rev. A, 28-Nov-2022 Document Number: 62127 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 20.0 20 10000 10.0 VGS = 5 V 100 5.0 10 0 0 1.0 2.0 15 1000 10 1st line 2nd line 1000 2nd line ID - Drain Current (A) 15.0 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 6 V TC = 125 °C 100 5 TC = 25 °C TC = -55 °C 0 0 3.0 2 4 10 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.15 10000 1000 1000 0.09 100 VGS = 10 V 0.06 1000 100 Coss 100 10 Crss 10 0.03 0 5 10 15 10 1 20 0 20 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1000 1st line 2nd line 6 VDS = 38 V, 75 V, 120V 100 2 10 0 0 1 2 3 4 5 6 10000 VGS = 10 V, 3.7 A 2.0 1000 1.6 1st line 2nd line 8 2nd line RDS(on) - On-Resistance (Normalized) 2.4 ID = 3.7 A 4 100 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line VGS = 6 V 2nd line C - Capacitance (pF) 0.12 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss 1.2 100 0.8 VGS = 6 V, 3.4 A 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S22-0979-Rev. A, 28-Nov-2022 Document Number: 62127 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 0.3 10000 100 ID = 3.7 A 1000 TJ = 150 °C 1 TJ = 25 °C 100 0.1 0.01 0.2 0.4 0.6 0.8 1.0 TJ = 125 °C 0.15 0.1 100 TJ = 25 °C 0.05 10 0 1000 0.2 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) 0.25 10 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 3.5 10000 50 ID = 250 μA 40 100 30 1st line 2nd line 2.6 1000 2nd line P - Power (W) 1000 2.9 1st line 2nd line 2nd line VGS(th) (V) 3.2 20 100 2.3 10 10 2.0 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 IDM limited Limited by RDS(on) a 100 μs 1000 1 1 ms 1st line 2nd line 2nd line ID - Drain Current (A) 10 10 ms 0.1 100 ms 10 s, 1s 0.01 100 DC TA = 25 °C, single pulse 0.001 0.01 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient S22-0979-Rev. A, 28-Nov-2022 Document Number: 62127 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 4.5 1000 1st line 2nd line 2nd line ID - Drain Current (A) 6 3 100 1.5 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 1.8 10000 10000 6 5 100 0.45 1st line 2nd line 2nd line Power (W) 0.9 1000 4 1000 1st line 2nd line 2nd line P - Power (W) 1.35 3 100 2 1 0 10 0 0 25 50 75 100 125 150 10 0 25 50 75 100 125 TA - Ambient Temperature (°C) TF - Foot Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Foot 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S22-0979-Rev. A, 28-Nov-2022 Document Number: 62127 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4848BDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 0.2 0.1 1st line Normalized Effective Transient Thermal Impedance 1 0.1 100 0.05 Single pulse 0.02 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62127. S22-0979-Rev. A, 28-Nov-2022 Document Number: 62127 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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