SI4862DY-T1-GE3

Si4862DY Vishay Siliconix N-Channel 16-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 16 RDS(on) (Ω) ID (A) 0.0033 at VGS = 4.5 V 25 0.0055 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 2.5 V Rated • Low 3.3 mΩ RDS(on) • Low Gate Resistance • 100 % Rg Tested APPLICATIONS • Synchronous Rectification • Low Output Voltage Synchronous Rectification D SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View S Ordering Information: Si4862DY-T1-E3 (Lead (Pb)-free) Si4862DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 16 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 25 17 13 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range V 20 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71439 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 1 Si4862DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit ± 100 nA Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage VDS = 12.8 V, VGS = 0 V 1 VDS = 12.8 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 4.5 V RDS(on) Forward Transconductancea a V µA 30 A VGS = 4.5 V, ID = 25 A 0.0027 0.0033 VGS = 2.5 V, ID = 20 A 0.0045 0.0055 gfs VDS = 6 V, ID = 25 A 140 VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 48 70 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 6 V, VGS = 4.5 V, ID = 25 A 8.9 0.5 1.3 td(on) Turn-On Delay Time VDD = 6 V, RL = 6 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 11.8 IF = 2.9 A, dI/dt = 100 A/µs Ω 2.2 42 60 38 60 120 180 50 75 80 120 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 5 V thru 2.5 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 2V 20 40 30 TC = 125 °C 20 25 °C 10 10 - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 71439 S09-0221-Rev. C, 09-Feb-09 Si4862DY Vishay Siliconix 0.010 10 000 0.008 8000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 2.5 V 0.006 0.004 VGS = 4.5 V Ciss 6000 4000 Coss 2000 0.002 Crss 0 0.000 0 10 20 30 40 50 0 60 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 15 1.6 VDS = 6 V ID = 25 A VGS = 4.5 V ID = 25 A 1.4 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 On-Resistance vs. Drain Current 5 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 12 24 36 48 60 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.015 60 R DS(on) - On-Resistance (Ω) TJ = 150 °C I S - Source Current (A) 3 10 TJ = 25 °C 0.012 0.009 0.006 ID = 25 A 0.003 0.000 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71439 S09-0221-Rev. C, 09-Feb-09 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4862DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 50 0.2 0.0 40 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10 - 2 10 - 1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 t1 t2 10 - 3 10 - 2 4. Surface Mounted 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71439. www.vishay.com 4 Document Number: 71439 S09-0221-Rev. C, 09-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000