Si4916DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
ID (A)a Qg (Typ.)
RDS(on) (Ω)
0.018 at VGS = 10 V
10
0.023 at VGS = 4.5 V
8.5
0.018 at VGS = 10 V
10.5
0.022 at VGS = 4.5 V
9.3
6.6
8.9
• Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT® Plus Integrated Schottky
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
- Notebook
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V at 1.0 A
2.0
D1
SO-8
G1
D1
1
8
G1
D1
2
7
S1/D2
G2
3
6
S1/D2
S2
4
5
S1/D2
N-Channel 1
MOSFET
S1/D2
Schottky Diode
G2
Top View
N-Channel 2
MOSFET
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150 °C)a, b
TC = 25 °C
10
10.5
8
8.3
TA = 25 °C
IDM
Pulsed Drain Current (10 µs Pulse Width)
TC = 25 °C
TA = 25 °C
IS
PulseD Source-Drain Current
ISM
Single-Pulse Avalanche Current
IAS
Single-Pulse Avalanche Energy
L = 0.1 mH
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
7.8a, b, c
6.3a, b, c
40
40
3
3.2
1.7a, b, c
1.8a, b, c
40
TJ, Tstg
A
40
15
EAS
TC = 25 °C
Maximum Power Dissipationa, b
7.5
a, b, c
6a ,b, c
TA = 70 °C
Continuous Source-Drain Diode Current
V
TC = 70 °C
ID
Unit
11.2
mJ
3.3
3.5
2.1
2.2
a, b, c
2.0a, b, c
1.2a, b, c
1.3a, b, c
1.9
- 55 to 150
W
°C
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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1
Si4916DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Typ.
Max.
Typ.
Max.
t ≤ 10 s
RthJA
54
65
47
60
Steady State
RthJF
32
38
30
35
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Channel-2
Symbol
Parameter
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 µA
ΔVDS/TJ
ID = 250 µA
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
ΔVGS(th)/TJ
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = 20 V
IDSS
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
Drain-Source On-State Resistanceb
ID(on)
RDS(on)
Forward Transconductanceb
gfs
Diode Forward Voltageb
VSD
30
Ch-2
30
VDS = 5 V, VGS = 10 V
V
Ch-1
24
Ch-2
25
Ch-1
-6
Ch-2
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
Ch-1
mV/°C
-6
Ch-1
1.5
Ch-2
1.5
3.0
V
2.7
Ch-1
100
Ch-2
100
Ch-1
1
Ch-2
100
Ch-1
15
Ch-2
nA
µA
2000
Ch-1
20
Ch-2
20
A
VGS = 10 V, ID = 10 A
Ch-1
0.0145
0.018
VGS = 10 V, ID = 10.5 A
Ch-2
0.015
0.018
VGS = 4.5 V, ID = 8.5 A
Ch-1
0.019
0.023
VGS = 4.5 V, ID = 9.3 A
Ch-2
0.018
0.022
VDS = 15 V, ID = 10 A
Ch-1
30
VDS = 15 V, ID = 10.5 A
Ch-2
35
IS = 1.7 A, VGS = 0 V
Ch-1
0.75
1.1
IS = 1 A, VGS = 0 V
Ch-2
0.47
0.5
Ch-1
6.6
10
Ch-2
8.9
14
Ch-1
2.9
Ch-2
3.4
Ch-1
2.3
Ω
S
V
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
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2
Qg
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
Qgd
Rg
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = - 10.5 A
Ch-2
nC
2.4
Ch-1
0.5
1.9
2.9
Ch-2
0.5
2.3
3.5
Ω
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Si4916DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Typ.a
Max.
Ch-1
8
15
Ch-2
9
15
Ch-1
11
18
Ch-2
13
20
Ch-1
21
32
Ch-2
27
40
Ch-1
6
10
Ch-2
9
15
Ch-1
28
40
35
Test Conditions
Min.
Unit
Dynamica
Turn-On Delay Time
td(on)
tr
Rise Time
Turn-Off Delay Time
td(off)
tf
Fall Time
trr
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Channel-1
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Channel-2
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
Ch-2
24
IF = 1.3 A, dI/dt = 100 A/µs
Ch-1
17
IF = 2.2 A, dI/dt = 100 µA/µs
Ch-2
12
IF = 1.3 A, dI/dt = 100 A/µs
Ch-1
12
IF = 2.2 A, dI/dt = 100 µA/µs
Ch-2
11
IF = 1.3 A, dI/dt = 100 A/µs
Ch-1
16
IF = 2.2 A, dI/dt = 100 µA/µs
Ch-2
13
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Test Conditions
Typ.
Max.
IF = 1.0 A
Min.
0.47
0.50
IF = 1.0 A, TJ = 125 °C
0.36
0.42
VR = 30 V
0.004
0.100
VR = 30 V, TJ = 100 °C
0.7
10
VR = - 30 V, TJ = 125 °C
3.0
20
VR = 10 V
50
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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Si4916DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 V thru 5 V
35
35
4V
30
ID - Drain Current (A)
ID - Drain Current (A)
30
25
20
15
10
25
20
15
TC = 125 °C
10
25 °C
5
5
3V
- 55 °C
0
0
0.00
0.30
0.60
0.90
1.20
0
1.50
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.025
900
0.022
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1050
VGS = 4.5 V
0.019
0.016
VGS = 10 V
Ciss
750
600
450
300
Coss
0.013
150
Crss
0
0.010
0
5
10
15
20
25
30
35
0
40
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.6
6
VGS = 10 V and 4.5 V
ID = 7.5 A
ID = 7.5 A
5
4
VDS = 15 V
3
2
(Normalized)
1.4
VDS = 10 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.2
1.0
0.8
1
0
0
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4
1
2
3
4
5
6
7
8
9
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Si4916DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
40
ID = 7.5 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.04
0.03
0.02
0.01
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
120
100
0.2
0.0
80
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.2
60
- 0.4
40
- 0.6
20
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
IDM Limited
I D - Drain Current (A)
10
1 ms
1
ID(on)
Limited
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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Si4916DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Si4916DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
35
35
VGS = 10 V thru 4 V
30
I D - Drain Current (A)
I D - Drain Current (A)
30
25
20
15
10
25
20
15
TC = 125 °C
10
3V
5
25 °C
5
- 55 °C
0
0.0
0.3
0.6
0.9
1.2
0
0.0
1.5
0.5
1.0
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.025
1400
0.022
1120
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.019
VGS = 10 V
0.016
840
560
Coss
0.013
280
0.010
0
Crss
0
5
10
15
20
25
30
35
0
40
15
20
25
On-Resistance vs. Drain Current
Capacitance
30
1.6
VGS = 10 V and 4.5 V
ID = 7.8 A
ID = 7.8 A
5
4
VDS = 15 V
3
2
(Normalized)
1.4
VDS = 10 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
VDS - Drain-to-Source Voltage (V)
6
1.2
1.0
0.8
1
0
0.0
5
I D - Drain Current (A)
2.2
4.4
6.6
8.8
11.0
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
150
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Si4916DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.05
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 7.8 A
TJ = 150 °C
TJ = 25 °C
1
0.04
0.03
0.02
0.01
0.00
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
100
10
1
80
10-1
Power (W)
I R - Reverse Current (mA)
4
10-2
30 V
24 V
10-3
60
40
20
10-4
10-5
0
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
1
0.1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Reverse Current vs. Junction Temperature
100
Limited by RDS(on)*
IDM Limited
I D - Drain Current (A)
10
1 ms
1
ID(on)
Limited
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Si4916DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74331.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
9
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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1
Document Number: 91000
