SI4966DY-T1-GE3

Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 7.1 0.035 at VGS = 2.5 V ± 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 D2 G1 G2 Top View Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C ID V ± 7.1 ± 5.7 IDM ± 40 IS 1.7 PD Unit 2 1.3 A W TJ, Tstg - 55 to 150 Symbol Limit Unit RthJA 62.5 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm. Document Number: 70718 S09-0869-Rev. D, 18-May-09 www.vishay.com 1 Si4966DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.6 IGSS Typ. Max. Unit 1.5 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 4.5 V 20 A VGS = 4.5 V, ID = 7.1 A 0.019 0.025 VGS = 2.5 V, ID = 6.0 A 0.025 0.035 gfs VDS = 10 V, ID = 7.1 A 27 VSD IS = 1.7 A, VGS = 0 V RDS(on) µA Ω S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Rg 25 VDS = 10 V, VGS = 4.5 V, ID = 7.1 A td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 4 f = 1 MHz td(on) tr 50 6.5 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs 1.6 2.7 40 60 40 60 90 150 40 60 40 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70718 S09-0869-Rev. D, 18-May-09 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 5 V thru 3 V 2.5 V 30 I D - Drain Current (A) I D - Drain Current (A) 30 20 2V 10 20 TC = 125 °C 10 25 °C 1 V, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 55 °C 0 0.0 4.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 Transfer Characteristics 0.10 4000 0.08 3200 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.06 0.04 VGS = 2.5 V 2400 1600 Coss 800 0.02 VGS = 4.5 V Crss 0 0.00 0 10 20 30 0 40 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 5 VGS = 4.5 V ID = 7.1 A VDS = 10 V ID = 7.1 A 1.4 3 2 (Normalized) 4 RDS (on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.2 1.0 0.8 1 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70718 S09-0869-Rev. D, 18-May-09 150 www.vishay.com 3 Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7.1 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.08 0.06 0.04 0.02 0.00 1.4 0 VSD - Source-to-Drain Voltage (V) 0.4 30 0.2 24 ID = 250 µA 0.0 5 On-Resistance vs. Gate-to-Source Voltage Power (W) V GS(th) Variance (V) Source-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) - 0.2 - 0.4 18 12 6 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TJ - Temperature (°C) 0.10 1.00 Time (s) 10.00 Threshold Voltage Single Pulse Power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70718. www.vishay.com 4 Document Number: 70718 S09-0869-Rev. D, 18-May-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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