Si5456DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)a
RDS(on) (Ω)
20
0.010 at VGS = 10 V
12
0.0135 at VGS = 4.5 V
12
Qg (Typ.)
9.8 nC
PowerPAK ChipFET Single
1
2
D
3
D
D
G
D
7
S
6
S
D
APPLICATIONS
4
D
D
8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• DC/DC
Marking Code
AC
XXX
G
Lot Traceability
and Date Code
5
Part # Code
Bottom View
S
Ordering Information: Si5456DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
12a
ID
12a, b, c
10.8b, c
50
IDM
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
2.6b, c
31
20
PD
W
3.1b, c
TA = 70 °C
2b, c
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
A
12a
IS
TC = 25 °C
Maximum Power Dissipation
V
12a
TA = 70 °C
Pulsed Drain Current
Unit
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
t≤5s
Symbol
Typical
Maximum
RthJA
34
40
Unit
°C/W
RthJC
3
4
Steady State
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
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1
Si5456DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
21
mV/°C
- 4.8
1
2.5
V
± 100
ns
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 9.3 A
0.008
0.010
VGS = 4.5 V, ID = 8 A
0.011
0.0135
VDS = 15 V, ID = 9.3 A
25
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
1200
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 14 A
VDS = 10 V, VGS = 4.5 V, ID = 14 A
td(off)
20
30
9.8
15
3.2
f = 1 MHz
VDD = 10 V, RL = 1.1 Ω
ID ≅ 9.6 A, VGEN = 4.5 V, Rg = 1 Ω
0.2
1.1
2.2
20
30
15
25
20
30
tf
10
15
td(on)
10
15
10
15
20
30
10
15
tr
td(off)
nC
3.2
td(on)
tr
pF
350
220
VDD = 10 V, RL = 1.1 Ω
ID ≅ 9.6 A, VGEN = 10 V, Rg = 1 Ω
tf
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
12
30
IS = 9.6 A, VGS = 0 V
IF = 9.6 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.85
1.2
V
15
30
ns
10
20
nC
8
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
Si5456DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
50
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
40
30
VGS = 3 V
20
12
TC = - 55 °C
8
TC = 25 °C
10
4
TC = 125 °C
VGS = 2 V
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
1500
0.016
1200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
VGS = 4.5 V
0.012
VGS = 10 V
0.008
0.004
3.0
Ciss
900
600
Coss
300
Crss
0.000
0
0
10
20
30
40
50
0
5
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.6
10
ID = 14 A
ID = 9.3 A
VGS = 10 V
1.4
VDS = 5 V
6
VDS = 10 V
VDS = 16 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
VGS = 4.5 V
1.0
0.8
2
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5456DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 25 °C
TJ = 150 °C
10
0.04
ID = 9.3 A; TJ = 125 °C
0.03
ID = 9.3 A; TJ = 25 °C
0.02
0.01
ID = 2 A; TJ = 125 °C
ID = 2 A; TJ = 25 °C
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
VSD - Source-to-Drain Voltage (V)
2.0
50
1.8
40
ID = 250 µA
Power (W)
VGS(th) (V)
6
8
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.6
4
VGS - Gate-to-Source Voltage (V)
1.4
30
20
1.2
10
1.0
0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
100 µs
10
1 ms
10 ms
1
100 ms
TA = 25 °C
Single Pulse
1s
10 s
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
Si5456DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
35
30
Power Dissipation (W)
I D - Drain Current (A)
40
30
20
Package Limited
25
20
15
10
10
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
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5
Si5456DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
10-4
Single Pulse
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64800.
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Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
