Si5473DC
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.027 at VGS = - 4.5 V
- 8.1
- 12
0.0335 at VGS = - 2.5 V
- 7.3
0.045 at VGS = - 1.8 V
- 6.3
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs
• Low RDS(on) and Excellent Power Handling
in Compact Footprint
APPLICATIONS
1206-8 ChipFET®
• Battery and Load Switch for Portable Devices
1
S
D
D
D
D
D
D
G
S
Marking Code
BI
G
XXX
Lot Traceability
and Date Code
Part #
Code
Bottom View
D
Ordering Information: Si5473DC-T1-E3 (Lead (Pb)-free)
Si5473DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Source Currenta
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
PD
- 5.9
- 5.9
- 4.3
± 20
- 2.1
- 1.1
2.5
1.3
1.3
0.7
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 8.1
IDM
Pulsed Drain Current
Soldering Recommendations (Peak
ID
- 55 to 150
Temperature)b, c
Unit
A
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
50
80
95
15
20
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72261
S09-0129-Rev. B, 02-Feb-09
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1
Si5473DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.40
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.9 A
0.022
0.027
RDS(on)
VGS = - 2.5 V, ID = - 5.3 A
0.028
0.0335
VGS = - 1.8 V, ID = - 2.2 A
0.036
0.045
gfs
VDS = - 5 V, ID = - 5.9 A
20
VSD
IS = - 1.1 A, VGS = 0 V
- 0.8
- 1.2
21
32
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.9 A
3.1
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
- 1.0
V
± 100
nA
VDS = - 9.6 V, VGS = 0 V
-1
VDS = - 9.6 V, VGS = 0 V, TJ = 85 °C
-5
µA
- 20
A
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
25
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
6.0
40
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
50
75
145
220
90
135
IF = - 1.1 A, dI/dt = 100 A/µs
70
105
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 5 thru 2 V
16
I D - Drain Current (A)
I D - Drain Current (A)
15
10
1.5 V
12
8
TC = - 55 °C
5
4
25 °C
- 55 °C
1V
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72261
S09-0129-Rev. B, 02-Feb-09
Si5473DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3000
2500
0.08
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.10
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
2000
1500
1000
500
VGS = 4.5 V
0.00
0
0
5
10
15
20
0
2
4
6
8
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
12
1.4
5
VDS = 6 V
ID = 5.9 A
VGS = 4.5 V
ID = 5.9 A
1.3
4
3
2
1.2
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
Coss
Crss
0.02
1.1
1.0
0.9
0.8
1
0.7
0.6
- 50
0
0
5
10
15
20
25
25
50
75
100
125
Gate Charge
On-Resistance vs. Junction Temperature
150
0.10
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
I S - Source Current (A)
0
TJ - Junction Temperature (°C)
20
10
TJ = 25 °C
1
0.0
- 25
Qg - Total Gate Charge (nC)
0.08
0.06
ID = 2.2 A
ID = 5.9 A
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72261
S09-0129-Rev. B, 02-Feb-09
1.4
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si5473DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
0.4
0.3
40
VGS(th) Variance (V)
ID = 250 µA
Power (W)
0.2
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10 -3
150
10 -2
10 -1
TJ - Temperature (°C)
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
100
Limited by RDS(on)*
IDM
Limited
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10, DC
TA = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 80 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72261
S09-0129-Rev. B, 02-Feb-09
Si5473DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
Square Wave Pulse Duration (s)
10 -1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72261.
Document Number: 72261
S09-0129-Rev. B, 02-Feb-09
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Revision: 08-Feb-17
1
Document Number: 91000