Si5479DU
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.021 at VGS = - 4.5 V
- 16.9
0.028 at VGS = - 2.5 V
- 16
0.039 at VGS = - 1.8 V
- 16
VDS (V)
- 12
Qg (Typ.)
21 nC
•
•
•
•
Halogen-free
TrenchFET® Power MOSFET
New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
PowerPAK ChipFET Single
APPLICATIONS
• Load Switch, PA Switch, and Battery Switch for Portable
Applications
1
2
D
8
3
D
D
4
D
D
G
D
7
S
Marking Code
BB
S
6
S
5
XXX
Lot Traceability
and Date Code
G
Part # Code
Bottom View
D
P-Channel MOSFET
Ordering Information: Si5479DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Unit
V
- 16a
- 16a
- 10.3b, c
- 8.3b, c
- 20
- 14.8
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
- 12
±8
- 2.6b, c
17.8
11.4
3.1b, c
2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
30
5.5
Maximum
40
7
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
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1
Si5479DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 10.3
mV/°C
2.6
- 0.4
- 1.0
V
± 100
ns
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
- 20
µA
A
VGS = - 4.5 V, ID = - 6.9 A
0.017
0.021
VGS = - 2.5 V, ID = - 6 A
0.023
0.028
VGS = - 1.8 V, ID = - 2.6 A
0.032
0.039
VDS = - 6 V, ID = - 6.9 A
24
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1810
VDS = - 6 V, VGS = 0 V, f = 1 MHz
490
VDS = - 6 V, VGS = - 8 V, ID = - 6.9 A
34
51
21
32
VDS = - 6 V, VGS = - 4.5 V, ID = - 6.9 A
3.1
f = 1 MHz
9.1
12
VDD = - 6 V, RL = 0.7 Ω
ID ≅ - 8.3 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
20
35
55
76
115
tf
115
175
td(on)
6
12
td(off)
tr
td(off)
nC
6
td(on)
tr
pF
640
VDD = - 6 V, RL = 0.7 Ω
ID ≅ - 8.3 A, VGEN = - 8 V, Rg = 1 Ω
tf
13
20
77
115
100
150
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
- 14.9
- 20
IS = - 8.6 A, VGS = 0 V
- 0.9
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
55
90
ns
Body Diode Reverse Recovery Charge
Qrr
28
45
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C
19
36
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73368
S-81448-Rev. B, 23-Jun-08
Si5479DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
10
VGS = 5 thru 2 V
8
I D - Drain Current (A)
I D - Drain Current (A)
16
12
1.5 V
8
6
TC = 125 °C
4
25 °C
2
4
- 55 °C
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
2.0
3000
2500
0.08
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
0.4
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
Ciss
2000
1500
1000
Coss
0.02
Crss
500
VGS = 4.5 V
0.00
0
0
4
8
12
16
20
0
2
4
8
10
12
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.4
8
7
1.3
ID = 6.9 A
6
5
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
6
VDS = 6 V
4
VDS = 9.6 V
3
2
VGS = 4.5, 2.5, 1.8 V
ID = 6.9 A
1.2
1.1
1.0
0.9
0.8
0.7
1
0
0
5
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
10
15
20
25
30
35
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
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Si5479DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
R DS(on) - Drain-to-Source On-Resistance (mΩ)
20
I S - Source Current (A)
TJ = 150 °C
TJ = 25 °C
ID = 6.9 A
0.08
0.06
TA = 125 °C
0.04
TA = 25 °C
0.02
0.00
1
0.0
0.10
0.2
0.4
0.6
1.2
1.0
0.8
0
1.4
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
40
0.8
30
ID = 250 µA
Power (W)
VGS(th) (V)
0.7
0.6
20
0.5
10
0.4
0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
600
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I D - Drain Current (A)
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
0.01
0.1
TA = 25 °C
Single Pulse
DC
10
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73368
S-81448-Rev. B, 23-Jun-08
Si5479DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
20
16
Power Dissipation (W)
ID - Drain Current (A)
25
20
Package Limited
15
10
12
8
4
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73368
S-81448-Rev. B, 23-Jun-08
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5
Si5479DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73368.
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Document Number: 73368
S-81448-Rev. B, 23-Jun-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
