Si5856DC
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET with Schottky Diode
FEATURES
MOSFET PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
ID (A)
0.040 at VGS = 4.5 V
5.9
0.045 at VGS = 2.5 V
5.6
0.052 at VGS = 1.8 V
5.2
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20
0.375 V at 1.0 A
1.0
1206-8 ChipFET®
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Ultra Low RDS(on)
• Ultra Low VF Schottky
• Si5853DC Pin Compatible
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Buck Rectifier Switch, Buck-Boost
• Synchronous Rectifier or Load
• Switch for Portable Devices
K
1
D
A
K
A
K
S
D
Marking Code
G
JD
G
XXX
Lot Traceability
and Date Code
D
Part # Code
S
Bottom View
Ordering Information: Si5856DC-T1-E3 (Lead (Pb)-free)
Si5856DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Symbol
VDS
5s
Steady State
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
±8
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C
TA = 85 °C
Continuous Source Current (MOSFET Diode Conduction)a
Average Forward Current (Schottky)
Operating Junction and Storage Temperature Range
IS
V
4.4
4.2
3.1
20
1.8
IF
0.9
7
TA = 25 °C
2.1
1.1
TA = 85 °C
1.1
0.6
1.9
1.1
TA = 25 °C
PD
TA = 85 °C
1.0
TJ, Tstg
A
1.0
IFM
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (Schottky)a
5.9
IDM
Pulsed Drain Current (MOSFET)
Maximum Power Dissipation (MOSFET)a
ID
Unit
20
W
0.56
- 55 to 150
°C
260
Soldering Recommendations (Peak Temperature)b, c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
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Si5856DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
t≤5s
Schottky
Junction-to-Ambienta
Steady State
Junction-to-Foot
Symbol
MOSFET
Steady State
MOSFET
RthJA
Schottky
MOSFET
Schottky
RthJF
Typical
Maximum
50
60
54
65
90
110
95
115
30
40
30
40
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
VDS = VGS, ID = 250 µA
0.4
IGSS
VDS = 0 V, VGS = ± 8 V
1.0
V
VDS = 20 V, VGS = 0 V
± 100
1
nA
VDS = 20 V, VGS = 0 V, TJ = 85 °C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
VDS ≥ 5 V, VGS = 4.5 V
20
A
VGS = 4.5 V, ID = 4.4 A
0.032
0.040
VGS = 2.5 V, ID = 4.1 A
0.036
0.045
VGS = 1.8 V, ID = 1.9 A
0.042
0.052
gfs
VDS = 10 V, ID = 4.4 A
22
VSD
IS = 1.0 A, VGS = 0 V
0.8
1.2
5
7.5
RDS(on)
µA
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
nC
0.85
1
20
30
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
36
55
30
45
12
20
IF = 0.9 A, dI/dt = 100 A/µs
45
90
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
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Symbol
VF
Irm
CT
Test Conditions
Typ.
Max.
IF = 1.0 A
Min.
0.34
0.375
IF = 1.0 A, TJ = 125 °C
0.255
0.290
Vr = 20 V
0.05
0.500
Vr = 20 V, TJ = 85 °C
2
20
Vr = 20 V, TJ = 125 °C
10
100
Vr = 10 V
90
Unit
V
mA
pF
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
Si5856DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
TC = - 55 °C
VGS = 5 V thru 2 V
16
16
12
I D - Drain Current (A)
I D - Drain Current (A)
25 °C
1.5 V
8
4
125 °C
12
8
4
1V
0
0
1
2
3
4
0
0.0
5
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
800
0.10
600
0.06
VGS = 1.8 V
VGS = 2.5 V
0.04
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
700
0.08
500
400
300
VGS = 4.5 V
200
0.02
Coss
100
Crss
0
0.00
0
4
8
12
16
0
20
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VGS = 4.5 V
ID = 4.4 A
VDS = 10 V
ID = 4.4 A
1.4
3
2
(Normalized)
4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
1.2
1.0
0.8
1
0
0
1
2
3
4
5
6
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
150
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Si5856DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
RDS(on) - On-Resistance (Ω)
0.10
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.0
0.08
ID = 4.4 A
0.06
ID = 2 A
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
3
4
5
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.2
50
0.1
40
ID = 250 µA
0.0
Power (W)
VGS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
- 0.1
30
20
- 0.2
10
- 0.3
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
TJ - Temperature (°C)
10-1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
100
IDM Limited
Limited by RDS(on)*
I D - Drain Current (A)
10
1
P(t) = 0.0001
P(t) = 0.001
ID(on)
Limited
P(t) = 0.01
0.1
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
Si5856DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
I F - Forward Current (A)
I R - Reverse Current (mA)
10
1
0.1
20 V
10 V
0.01
TJ = 25 °C
TJ = 150 °C
1
0.001
0.0001
- 50
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
150
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
VF - Forward Voltage Drop (V)
Forward Voltage Drop
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Si5856DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
CT - Junction Capacitance (pF)
600
500
400
300
200
100
0
0
4
8
12
16
20
VKA - Reverse Voltage (V)
Capacitance
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
t2
1. Duty Cycle, D =
0.05
0.02
t1
t2
2. Per Unit Base = R thJA = 95 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72234.
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Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
